The piezoresistive effect is a change in the electrical resistivity of a semiconductor or metal when mechanical strain is applied. In contrast to the piezoelectric effect, the piezoresistive effect causes a change only in electrical resistance, not in electric potential.
The change of electrical resistance in metal devices due to an applied mechanical load was first discovered in 1856 by Lord Kelvin. With single crystal silicon becoming the material of choice for the design of analog and digital circuits, the large piezoresistive effect in silicon and germanium was first discovered in 1954 (Smith 1954).
In conducting and semi-conducting materials, changes in inter-atomic spacing resulting from strain affect the bandgaps, making it easier (or harder depending on the material and strain) for electrons to be raised into the conduction band. This results in a change in resistivity of the material. Within a certain range of strain this relationship is linear, so that the piezoresistive coefficient
where
∂ρ = Change in resistivity
ρ = Original resistivity
ε = Strain
is constant.
Usually the resistance change in metals is mostly due to the change of geometry resulting from applied mechanical stress. However, even though the piezoresistive effect is small in those cases it is often not negligible. In cases where it is, it can be calculated using the simple resistance equation derived from Ohm's law;
where
Conductor length [m]
A Cross-sectional area of the current flow [m2]
Some metals display piezoresistivity that is much larger than the resistance change due to geometry. In platinum alloys, for instance, piezoresistivity is more than a factor of two larger, combining with the geometry effects to give a strain gauge sensitivity of up to more than three times as large than due to geometry effects alone. Pure nickel's piezoresistivity is -13 times larger, completely dwarfing and even reversing the sign of the geometry-induced resistance change.
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