Summary
Indium tin oxide (ITO) is a ternary composition of indium, tin and oxygen in varying proportions. Depending on the oxygen content, it can be described as either a ceramic or an alloy. Indium tin oxide is typically encountered as an oxygen-saturated composition with a formulation of 74% In, 18% Sn, and 8% O by weight. Oxygen-saturated compositions are so typical that unsaturated compositions are termed oxygen-deficient ITO. It is transparent and colorless in thin layers, while in bulk form it is yellowish to gray. In the infrared region of the spectrum it acts as a metal-like mirror. Indium tin oxide is one of the most widely used transparent conducting oxides because of its electrical conductivity and optical transparency, the ease with which it can be deposited as a thin film, and its chemical resistance to moisture. As with all transparent conducting films, a compromise must be made between conductivity and transparency, since increasing the thickness and increasing the concentration of charge carriers increases the film's conductivity, but decreases its transparency. Thin films of indium tin oxide are most commonly deposited on surfaces by physical vapor deposition. Often used is electron beam evaporation, or a range of sputter deposition techniques. ITO is a mixed oxide of indium and tin with a melting point in the range 1526–1926 °C (1800–2200 K, 2800–3500 °F), depending on composition. The most commonly used material is an oxide of a composition of ca. In4Sn. The material is a n-type semiconductor with a large bandgap of around 4 eV. ITO is both transparent to visible light and relatively conductive. It has a low electrical resistivity of ~10−4 Ω·cm, and a thin film can have an optical transmittance of greater than 80%. These properties are utilized to great advantage in touch-screen applications such as mobile phones. Indium tin oxide (ITO) is an optoelectronic material that is applied widely in both research and industry.
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