Electrical element

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Related publications (29)

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Negative capacitance semiconductor sensor

Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando

The present invention relates to a semiconductor sensor (1) comprising: a source element (17, 19); a drain element (21, 23); a semiconductor channel element (25) between the source element (17, 19) and the drain element (21, 23) for forming an electrically ...

2020

Nonreciprocity in acoustic and elastic materials

Romain Christophe Rémy Fleury, Hussein Nassar

The law of reciprocity in acoustics and elastodynamics codifies a relation of symmetry between action and reaction in fluids and solids. In its simplest form, it states that the frequency-response functions between any two material points remain the same a ...

2020

Origin of apparent light-enhanced and negative capacitance in perovskite solar cells

Wolfgang Richard Tress, Ulf Anders Hagfeldt, Firouzeh Ebadi Garjan

So-called negative capacitance seems to remain an obscure feature in the analysis of the frequency-dependent impedance of perovskite solar cells. It belongs to one of the puzzling peculiarities arising from the mixed ionic-electronic conductivity of this c ...

Springer2019

Sensitivity of Simulated Steel Column Instabilities to Plasticity Model Assumptions

Dimitrios Lignos, Albano António De Abreu E Presa De Castro E Sousa, Alexander Riley Hartloper

Current experimental studies on the seismic behavior of steel wide-flange columns under multi-axis cyclic loading reveal that these members, depending on their geometric characteristics, may be susceptible to axial shortening, out-of-plane deformations and ...

2019

Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3

Nergiz Sahin Solmaz, Mustafa Berke Yelten, Sadik Ilik

This paper presents a modeling approach to simulate the impact of total ionizing dose (TID) degradation on low-power analog and mixed-signal circuits. The modeling approach has been performed on 180-nm n-type metal-oxide-semiconductor field-effect transist ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

An improved time marching simulation of distributed multiport networks loaded with nonlinear devices

In this paper, we present a method for obtaining stable time marching equations of distributed multiport networks with nonlinear loads. This method allows to highly decrease the number of frequency samples required by other stable TM methods. Stability is ...

2018

Inverse Gating for Low Energy Block Ciphers

Francesco Regazzoni, Subhadeep Banik

In this paper we explore the technique of “inverse gating” which is a significant improvement over the ”round gating” technique introduced in HOST 2016. Round gating worked by generating timing signals to separate glitch propagation from one circuit elemen ...

2018

Dispatching Stochastic Heterogeneous Resources Accounting for Grid and Battery Losses

Jean-Yves Le Boudec, Mario Paolone, Fabrizio Sossan, Lorenzo Enrique Reyes Chamorro, Eleni Stai

We compute an optimal day-ahead dispatch plan for distribution networks with stochastic resources and batteries, while accounting for grid and battery losses. We formulate and solve a scenario-based AC Optimal Power Flow (OPF), which is by construction non ...

2018

An electromagnetic actuator

Herbert Shea, Juan José Zarate

The present invention concerns an electromagnetic actuator (2) for a haptic display (1). The actuator (2) comprises: a) a first, movable permanent magnetic element (5), the first magnetic element (5) comprising a first latching layer facing side, a second ...

2018

A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Emanuele Andrea Casu, Matteo Cavalieri, Andrei Müller, Alessandro Fumarola

This letter introduces a reconfigurable planar square-coil-shaped inductor exploiting as the tuning mechanism the insulator-to-metal transition (IMT) of a vanadium dioxide (VO2) switch placed in the interwinding space in an unprecedented manner. The VO2 th ...

2018

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