Theresa Lutz

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Reversing the shape transition of InAs/GaAs (001) quantum dots by etching-induced lateral In segregation

Klaus Kern, Theresa Lutz, Giovanni Costantini

The shape evolution of epitaxially grown InAs/GaAs(001) quantum dots after the controlled removal of material by an in situ etching gas is investigated by atomic force and scanning tunneling microscopy. The presence of {137} facets on the surface of partia ...

2010

Electroluminescence from Individual Pentacene Nanocrystals

Klaus Kern, Theresa Lutz, Alexander Kabakchiev

2010

Substrate effect on supramolecular self-assembly: from semiconductors to metals

Klaus Kern, Theresa Lutz, Giovanni Costantini, Dietmar Payer

Terephthalic acid (TPA) deposited on Si(111)-7 x 7, Si(111)-root 3 x root 3-Ag and Ag(111) has been studied as a model system to understand how much passivated semiconductor surfaces differ from semiconductor and metal surfaces in respect of supramolecular ...

2009

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