Livio Lattanzio

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Related publications (21)

Understanding the Superlinear Onset of Tunnel-FET Output Characteristic

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

In this letter, we report that the source and channel Fermi-Dirac distributions in interband-tunneling-controlled transistors play a fundamental role on the modulation of the injected current. We explain the superlinear onset of the output characteristics ...

Institute of Electrical and Electronics Engineers2012

Complementary Germanium Electron-Hole Bilayer Tunnel FET for Sub-0.5-V Operation

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

In this paper we present a novel device, the Germanium Electron-Hole Bilayer Tunnel FET (Ge EHBTFET), which exploits carrier tunneling through a bias-induced electron-hole bilayer. The proposed architecture provides a quasi-ideal alignment between the tunn ...

Institute of Electrical and Electronics Engineers2012

FinFET for high sensitivity ion and biological sensing applications

Mihai Adrian Ionescu, Livio Lattanzio, Sara Rigante

A double-gate (DG) fin field effect transistor (FinFET) is discussed as new label-free ion and biological sensor. Simulations as function of channel doping, geometrical dimensions, operation point and materials investigated the device response to an extern ...

2011

Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Pierpaolo Palestri, Luca Selmi

The Tunnel-FET (TFET) device is a gated reverse biased p-i-n junction whose working principle is based on the quantum mechanical Band-to-Band Tunneling (B2BT) mechanism [1]. The OFF-ON transition can be much more abrupt than for conventional MOSFETs, thus ...

IEEE2011

Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

We propose a novel Tunnel field-effect transistor (TFET) concept called the electron-hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron-hole bilayer in order to achieve improved switching and higher driv ...

IEEE2011

Modeling the Temperature Dependence of Fe-FET Static Characteristics Based on Landau's Theory

Mihai Adrian Ionescu, Didier Bouvet, Livio Lattanzio, Giovanni Antonio Salvatore

The performance of a standard MOSFET degrades with the increase in temperature, impacting the power consumption of the device. In this paper, we report the opposite trend, which is reflected in an improvement of main performance factors in ferroelectric FE ...

2011

A tunneling field-effect transistor exploiting internally combined band-to-band and barrier tunneling mechanisms

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Arnab Biswas

This letter proposes a hybrid abrupt switch principle and a corresponding device architecture that combines quantum mechanical band-to-band and barrier tunneling mechanisms. The device overcomes the intrinsically low on-current (I-ON) of conventional tunne ...

AIP American Institute of Physics2011

The Curie temperature as a key design parameter of ferroelectric Field Effect Transistors

Mihai Adrian Ionescu, Didier Bouvet, Livio Lattanzio, Giovanni Antonio Salvatore

Interest in Ferroelectric FETs originates from their potential as non-volatile memories and, more recently, as abrupt switches. In this work, we focus on the role of the Curie temperature of the gate stack on the performance of Fe-FETs. The proposed study ...

IEEE2010

Abrupt switch based on internally combined band-to-band and barrier tunneling mechanisms

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Arnab Biswas

We report a simulation-based study of an all-silicon novel device which exploits internally combined quantum mechanical band-to-band and barrier tunneling mechanisms to overcome the intrinsic low current drive limitations of conventional silicon Tunnel FET ...

2010

Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Arnab Biswas

We report a novel device which exploits the internally combined quantum mechanical Band-To-Band and Barrier Tunneling mechanisms to achieve improved performances and overcome the intrinsic low current drive limitations of conventional Tunnel FETs and the 6 ...

IEEE2010

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