Valerio Piazza

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Related publications (19)

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Anna Fontcuberta i Morral, Didem Dede, Valerio Piazza, Jean-Baptiste Leran, Raphaël François Lemerle, Wonjong Kim, Nicolas Tappy, Nicholas Paul Morgan, Akshay Balgarkashi, Titouan Charvin

III-V semiconductors outperform Si in many optoelectronics applications due to their high carrier mobility, efficient light emission and absorption processes, and the possibility to engineer their band gap through alloying. However, complementing Si techno ...

2022

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Anna Fontcuberta i Morral, Lucas Güniat, Didem Dede, Valerio Piazza, Martin George Friedl, Elif Nur Dayi, Nicholas Paul Morgan, Akshay Balgarkashi, Vladimir Dubrovskii

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

IOP Publishing Ltd2022

Accompanying dataset to ACS Appl. Nano Mater. 2022, 5, 4, 5508–5515 : Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Anna Fontcuberta i Morral, Didem Dede, Valerio Piazza, Raphaël François Lemerle, Jean-Baptiste Leran, Wonjong Kim, Nicolas Tappy, Nicholas Paul Morgan, Akshay Balgarkashi

Accompanying dataset containing the raw data and analysis contained in the main publication. This comprises the fitted CL-SEM dataset, the CL-STEM dataset, the CL-SEM presented in the SI and the STEM-EDX linescans. ...

Zenodo2022

Spatial Modulation of Vibrational and Luminescence Properties of Monolayer MoS & x2082; Using a GaAs Nanowire Array

Anna Fontcuberta i Morral, Lucas Güniat, Didem Dede, Valerio Piazza, Jean-Baptiste Leran, Wonjong Kim, Mirjana Dimitrievska, Akshay Balgarkashi

The integration of transition-metal dichalcogenides (TMDs) with non-planar substrates such as nanopillars provides a way to spatially modify the optical properties mainly through the localized strain. Similar studies to date have utilized insulating SiO2 n ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Correlated optical and electrical analyses of inhomogeneous core/shell InGaN/GaN nanowire light emitting diodes

Valerio Piazza

The performance of core-shell InGaN/GaN nanowire (NW) light emitting diodes (LEDs) can be limited by wire-to-wire electrical inhomogeneities. Here we investigate an array of core-shell InGaN/GaN NWs which are morphologically identical, but present electric ...

2021

Doping challenges and pathways to industrial scalability of III–V nanowire arrays

Anna Fontcuberta i Morral, Lucas Güniat, Valerio Piazza, Wonjong Kim

Semiconductor nanowires (NWs) have been investigated for decades, but their application into commercial products is still difficult to achieve, with triggering causes related to the fabrication cost and structure complexity. Dopant control at the nanoscale ...

2021

Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon

Anna Fontcuberta i Morral, Lucas Güniat, Valerio Piazza, Wonjong Kim, Vladimir Dubrovskii

Selective area epitaxy constitutes a mainstream method to obtain reproducible nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate preparation, with the drawback of uncontrolled positioning. We propose a mixed approac ...

American Chemical Society (ACS)2021

Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Simon Robert Escobar Steinvall, Valerio Piazza, Martin George Friedl, Jean-Baptiste Leran, Mahdi Zamani, Rajrupa Paul, Reza Zamani

Large-scale deployment of thin-film photovoltaics will be facilitatedthrough earth-abundant components. Herein, selective area epitaxyand lateral overgrowth epitaxy are explored for the growth of zincphosphide (Zn3P2), a promising earth-abundant absorber. ...

2021

Dataset for "Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning"

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Valerio Piazza, Martin George Friedl, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Reza Zamani

Raw data associated with the publication "Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning", first published in Nanoscale Advances on the 23nd November 2020. ...

Zenodo2020

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Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Anna Fontcuberta i Morral, Didem Dede, Valerio Piazza, Jean-Baptiste Leran, Raphaël François Lemerle, Wonjong Kim, Nicolas Tappy, Nicholas Paul Morgan, Akshay Balgarkashi, Titouan Charvin

2022

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Anna Fontcuberta i Morral, Lucas Güniat, Didem Dede, Valerio Piazza, Martin George Friedl, Elif Nur Dayi, Nicholas Paul Morgan, Akshay Balgarkashi, Vladimir Dubrovskii

IOP Publishing Ltd2022

Accompanying dataset to ACS Appl. Nano Mater. 2022, 5, 4, 5508–5515 : Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Anna Fontcuberta i Morral, Didem Dede, Valerio Piazza, Raphaël François Lemerle, Jean-Baptiste Leran, Wonjong Kim, Nicolas Tappy, Nicholas Paul Morgan, Akshay Balgarkashi

Zenodo2022