Publications related to Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen

Hydrogen-induced tunable remanent polarization in a perovskite nickelate

Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor doping, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an ...

Nature Portfolio2024

A Two-Wired High Input Impedance and High CMRR Active Electrode Insensitive to Component Mismatch

Alexandre Schmid, Mehdi Saberi

This article proposes a new two-wired amplifying active electrode (AE), presenting a high input impedance and a high common-mode rejection ratio (CMRR). In the proposed structure, the input impedance and the CMRR of the system are considerably increased by ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Active Power Decoupling for Single-Phase Input-Series-Output-Parallel Solid-State Transformers

Drazen Dujic, Andrea Cervone, Tianyu Wei

Solid-state transformers with input-series outputparallel structures are being considered for a variety of applications requiring MVAC to LVDC conversion. Due to the singlephase AC/DC conversion at the input side, all floating cells of the solid-state tran ...

2024

3D Printing of Customizable Transient Bioelectronics and Sensors

Danick Briand, Nicolas Francis Fumeaux

Transient electronics have emerged as a new category of devices that can degrade after their functional lifetime, offering tremendous potential as disposable sensors, actuators, wearables, and implants. Additive manufacturing methods represent a promising ...

2024

Phase Shift Angle Segmentation Modulation for Soft-Switching Medium-Voltage DAB Converter With Series-Connected SiC MOSFETs

Chengmin Li, Rui Lu, Heng Fang

The medium-voltage (MV) dual active bridge (DAB) converter with series-connected SiC (S-SiC) MOSFETs is a promising solution for high-power-density isolated dc/dc converter. To improve the voltage sharing and reliability of S-SiC, relatively large snubber ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Elison de Nazareth Matioli, Zheng Hao, Alessandro Floriduz

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

2024

Magnetism of Single Surface Adsorbed Atoms Studied with Radio-Frequency STM

Clément Marie Soulard

This thesis investigates the magnetic properties of single atoms and molecules adsorbed on thin magnesium oxide decoupling layers, grown on a silver single crystal. To address these systems experimentally, we use a low temperature scanning tunneling micros ...

EPFL2024

Ripple Voltage and Loss Reduction of Single-Phase ISOP SST by Eliminating the Second Harmonic Current in LLC Converters

Drazen Dujic, Andrea Cervone, Tianyu Wei

In two-stage solid-state transformers with input-series output-parallel structure, the LLC converter operating at a fixed switching frequency is a common choice for the isolated DC/DC conversion stage because it can provide a high efficiency and a fixed vo ...

2024

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Drazen Dujic

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

2024

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024