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Using a delta-doped GaAs/AlGaAs heterostructure with a 10 nm spacer layer, we exploit the metastable nature of the DX centers at low temperatures to control electrostatically their net frozen charge density. The concentration of DX(-) centers at 77 K is on ...
This paper presents the basis of the modeling of the MOS transistor for circuit simulation at RF. A physical equivalent circuit that can easily be implemented as a Spice subcircuit is first derived. The subcircuit includes a substrate network that accounts ...
After microelectromechanical systems (MEMS) devices have been well established, components of higher complexity are now developed. Particularly, the combination with optical components has been very successful and have led to optical MEMS. The technology o ...
This work reports on thermally isolated electronic components for gas sensing applications. The device is composed of an array of 4 MOSFET, a diode and a semiconductor resistor integrated on a micro-hotplate, which is fabricated using bulk micromachining o ...
We report on a 2×2 SOI switch, based on the plasma dispersion effect, reaching 5 MHz of switching frequency. Measured insertion losses, extinction ratio and crosstalk at 1300 nm and 1550 nm are presented and discussed. ...
We present a fully integrated Mach-Zehnder interferometer in silicon-on- insulator technology. Modulation of the index of refraction is achieved through the plasma dispersion effect resulting in a bandwidth in the 10 MHz range. A particular and innovative ...
We present a new scalable architecture for the realization of fully programmable rank order filters (ROF). Capacitive Threshold Logic (CTL) gates are utilized for the implementation of the multi-input programmable majority (voting) functions required in th ...
Low-frequency drain-current noise in pseudomorphic InAlAs/InGaAs/InP HEMTs has been studied at low drain bias as a function of the InGaAs pseudomorphic channel thickness. The 1/f noise at 77 K, quantified through the Kooge's empirical parameter alpha(ch), ...
Main stream bulk CMOS and the variants of silicon-on-insulator (SOI) CMOS technologies are discussed with respect to testing for the quiescent current of mixed-signal integrated SOI circuits. The 2-3 times lower static power consumption in fully depleted C ...
The sensitivity of RF CMOS receivers using a direct conversion or a low-IF architecture is strongly affected by flicker noise. This paper gives theoretical guidelines to predict the flicker noise in Gilbert-cell mixers. The conversion gain, the equivalent ...
