Dynamic random-access memoryDynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1.
Random-access memoryRandom-access memory (RAM; ræm) is a form of computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media (such as hard disks, CD-RWs, DVD-RWs and the older magnetic tapes and drum memory), where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.
Flash memoryFlash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate.
Memory refreshMemory refresh is the process of periodically reading information from an area of computer memory and immediately rewriting the read information to the same area without modification, for the purpose of preserving the information. Memory refresh is a background maintenance process required during the operation of semiconductor dynamic random-access memory (DRAM), the most widely used type of computer memory, and in fact is the defining characteristic of this class of memory.
Row hammerRow hammer (also written as rowhammer) is a security exploit that takes advantage of an unintended and undesirable side effect in dynamic random-access memory (DRAM) in which memory cells interact electrically between themselves by leaking their charges, possibly changing the contents of nearby memory rows that were not addressed in the original memory access. This circumvention of the isolation between DRAM memory cells results from the high cell density in modern DRAM, and can be triggered by specially crafted memory access patterns that rapidly activate the same memory rows numerous times.
Haswell (microarchitecture)Haswell is the codename for a processor microarchitecture developed by Intel as the "fourth-generation core" successor to the Ivy Bridge (which is a die shrink/tick of the Sandy Bridge microarchitecture). Intel officially announced CPUs based on this microarchitecture on June 4, 2013, at Computex Taipei 2013, while a working Haswell chip was demonstrated at the 2011 Intel Developer Forum. With Haswell, which uses a 22 nm process, Intel also introduced low-power processors designed for convertible or "hybrid" ultrabooks, designated by the "U" suffix.
Magnetic-core memoryMagnetic-core memory was the predominant form of random-access computer memory for 20 years between about 1955 and 1975. Such memory is often just called core memory, or, informally, core. Core memory uses toroids (rings) of a hard magnetic material (usually a semi-hard ferrite) as transformer cores, where each wire threaded through the core serves as a transformer winding. Two or more wires pass through each core. Magnetic hysteresis allows each of the cores to "remember", or store a state.
Delay-line memoryDelay-line memory is a form of computer memory, now obsolete, that was used on some of the earliest digital computers. Like many modern forms of electronic computer memory, delay-line memory was a refreshable memory, but as opposed to modern random-access memory, delay-line memory was sequential-access. Analog delay line technology had been used since the 1920s to delay the propagation of analog signals. When a delay line is used as a memory device, an amplifier and a pulse shaper are connected between the output of the delay line and the input.
Embedded systemAn embedded system is a computer system—a combination of a computer processor, computer memory, and input/output peripheral devices—that has a dedicated function within a larger mechanical or electronic system. It is embedded as part of a complete device often including electrical or electronic hardware and mechanical parts. Because an embedded system typically controls physical operations of the machine that it is embedded within, it often has real-time computing constraints. Embedded systems control many devices in common use.
Static random-access memoryStatic random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The term static differentiates SRAM from DRAM (dynamic random-access memory) — SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically refreshed.
