Indium gallium arsenideIndium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics.
Deformation (physics)In physics and continuum mechanics, deformation is the transformation of a body from a reference configuration to a current configuration. A configuration is a set containing the positions of all particles of the body. A deformation can occur because of external loads, intrinsic activity (e.g. muscle contraction), body forces (such as gravity or electromagnetic forces), or changes in temperature, moisture content, or chemical reactions, etc. Strain is related to deformation in terms of relative displacement of particles in the body that excludes rigid-body motions.
FractureFracture is the separation of an object or material into two or more pieces under the action of stress. The fracture of a solid usually occurs due to the development of certain displacement discontinuity surfaces within the solid. If a displacement develops perpendicular to the surface, it is called a normal tensile crack or simply a crack; if a displacement develops tangentially, it is called a shear crack, slip band or dislocation. Brittle fractures occur without any apparent deformation before fracture.
Indentation (typesetting)FORCETOC In the written form of many languages, an indentation or indent is an empty space at the beginning of a line to signal the start of a new paragraph. Many computer languages have adopted this technique to designate "paragraphs" or other logical blocks in the program. For example, the following lines are indented, using between one and six spaces: This paragraph is indented by 1 space. This paragraph is indented by 3 spaces. This paragraph is indented by 6 spaces.
Glossary of leaf morphologyThe following terms are used to describe leaf morphology in the description and taxonomy of plants. Leaves may be simple (a single leaf blade or lamina) or compound (with several leaflets). The edge of the leaf may be regular or irregular, may be smooth or bearing hair, bristles or spines. For more terms describing other aspects of leaves besides their overall morphology see the leaf article. The terms listed here all are supported by technical and professional usage, but they cannot be represented as mandatory or undebatable; readers must use their judgement.
Deformation (engineering)In engineering, deformation refers to the change in size or shape of an object. Displacements are the absolute change in position of a point on the object. Deflection is the relative change in external displacements on an object. Strain is the relative internal change in shape of an infinitesimally small cube of material and can be expressed as a non-dimensional change in length or angle of distortion of the cube. Strains are related to the forces acting on the cube, which are known as stress, by a stress-strain curve.
Transmission electron microscopyTransmission electron microscopy (TEM) is a microscopy technique in which a beam of electrons is transmitted through a specimen to form an image. The specimen is most often an ultrathin section less than 100 nm thick or a suspension on a grid. An image is formed from the interaction of the electrons with the sample as the beam is transmitted through the specimen. The image is then magnified and focused onto an imaging device, such as a fluorescent screen, a layer of photographic film, or a sensor such as a scintillator attached to a charge-coupled device.
Indium arsenideIndium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide is used for the construction of infrared detectors, for the wavelength range of 1.0–3.8 μm. The detectors are usually photovoltaic photodiodes.
CeramographyCeramography is the art and science of preparation, examination and evaluation of ceramic microstructures. Ceramography can be thought of as the metallography of ceramics. The microstructure is the structure level of approximately 0.1 to 100 μm, between the minimum wavelength of visible light and the resolution limit of the naked eye. The microstructure includes most grains, secondary phases, grain boundaries, pores, micro-cracks and hardness microindentations.
Creep (deformation)In materials science, creep (sometimes called cold flow) is the tendency of a solid material to undergo slow deformation while subject to persistent mechanical stresses. It can occur as a result of long-term exposure to high levels of stress that are still below the yield strength of the material. Creep is more severe in materials that are subjected to heat for long periods and generally increase as they near their melting point. The rate of deformation is a function of the material's properties, exposure time, exposure temperature and the applied structural load.
