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Profiling novel high-conductivity 2D semiconductors

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Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

Electron-phonon driven unconventional superconductivity: The role of small Fermi energies and of nonadiabatic processes

Claudio Grimaldi

The very concept of high-T-c superconductivity has originated from the discovery of superconductivity in copper oxides by Bednorz and Muller in 1986. Soon after their discovery, cuprates were recognized as undoubtedly complex and radically unconventional s ...

Elsevier2023

Experimental and numerical investigations of electron transport enhancement by electron-cyclotron plasma-wave interaction in tokamaks

Stefano Coda, Laurent Villard, Laurie Porte, Joan Decker, Giovanni Di Giannatale, Aylwin Iantchenko, Jean Arthur Cazabonne

Energy transfer from electron-cyclotron (EC) waves to the plasma is being routinely used in tokamaks to heat and drive current through the electron channel. Technical applications such as magnetohydrodynamic mode mitigation require power deposition with a ...

IOP Publishing Ltd2023

Correlated insulator collapse due to quantum avalanche via in-gap ladder states

Xi Chen, Camille Didier Georges Aron

The significant discrepancy observed between the predicted and experimental switching fields in correlated insulators under a DC electric field far-from-equilibrium necessitates a reevaluation of current microscopic understanding. Here we show that an elec ...

Nature Portfolio2023

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Elison de Nazareth Matioli, Luca Nela, Catherine Erine, Amirmohammad Miran Zadeh

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

2022

A perspective on multi-channel technology for the next-generation of GaN power devices

Elison de Nazareth Matioli, Luca Nela

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

AIP Publishing2022

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Luca Nela

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

EPFL2022

Electrical Spectroscopy of Defect States in Synthetic 2D Materials

Yanfei Zhao

Two-dimensional (2D) materials such as graphene and transition metal dichalcogenide (TMDC) are considered as one of the most promising material platforms for future electronic devices, due to their ultra-thin thickness and fascinating electrical and optica ...

EPFL2022

Many-body Green?s function approach to lattice thermal transport

Nicola Marzari, Michele Simoncelli

Recent progress in understanding thermal transport in complex crystals has highlighted the prominent role of heat conduction mediated by interband tunneling processes, which emerge between overlapping phonon bands (i.e., with energy differences smaller tha ...

AMER PHYSICAL SOC2022

Modelling electronic transport in monocrystalline metal oxide gas sensors: from the surface kinetics to the experimental response

Roberto Guarino, Gianluca Piccinini

Gas sensing systems and devices based on metal oxides are widely spreading due to their high performance in terms of sensor response and relatively low costs. Despite several experimental studies, as well as molecular simulations, are available in the lite ...

2022

Page 3 of 3

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb

AMER PHYSICAL SOC2023

Electron-phonon driven unconventional superconductivity: The role of small Fermi energies and of nonadiabatic processes

Claudio Grimaldi

Elsevier2023

Experimental and numerical investigations of electron transport enhancement by electron-cyclotron plasma-wave interaction in tokamaks

Stefano Coda, Laurent Villard, Laurie Porte, Joan Decker, Giovanni Di Giannatale, Aylwin Iantchenko, Jean Arthur Cazabonne

IOP Publishing Ltd2023

Modelling electronic transport in monocrystalline metal oxide gas sensors: from the surface kinetics to the experimental response

Roberto Guarino, Gianluca Piccinini

2022

Many-body Green?s function approach to lattice thermal transport

Nicola Marzari, Michele Simoncelli

AMER PHYSICAL SOC2022