Recent progress in the growth of highly reflective nitride-based distributed Bragg reflectors and their use in microcavities

Related publications (25)

Page 3 of 3

About
Privacy
Disclaimer

Graph Chatbot

InGaN alloys and heterostructures : impact of localization effects on light-matter interaction in planar microcavities

Marlene Glauser

The III-nitride semiconductor material system - (InAlGa)N - is of highest interest for optoelectronic applications due to its direct bandgap, tunable from the ultraviolet to the infrared spectral range. The most well-known are white light-emitting diodes, ...

EPFL2014

Dilute-Nitride Low-Dimensional Nanostructures Formed on Non-Planar Substrates

Romain Carron

The properties of semiconductors heterostructures of nanoscopic dimensions change from that of bulk material according to the rules of quantum mechanics. The planar quantum wells (QWs) are widely used in various diode and laser devices thanks to the relati ...

EPFL2013

Near-infrared characterization of gallium nitride photonic-crystal waveguides and cavities

Nicolas Grandjean, Romuald Houdré, Jean-François Carlin, Noelia Vico Triviño, Ulagalandha Perumal Dharanipathy, Zhaolu Diao

We report the design and optical characterization of fully suspended wire waveguides and photonic crystal (PhC) membranes fabricated on a gallium nitride layer grown on silicon substrate operating at 1.5 mu m. W1-type PhC waveguides are coupled with suspen ...

Optical Society of America2012

Controlled Multi-Wavelength Emission in Full CMOS Compatible Micro-Lasers for on Chip Interconnections

We report on a system to control the emitted wavelength of a laser independently from its pump conditions. To illustrate the concept, it is applied to III-V microdisk lasers fabricated on a CMOS pilot line for application to multicolored optical interconne ...

IEEE Institute of Electrical and Electronics Engineers2012

Static and dynamic properties of multi-section InGaN-based laser diodes

Nicolas Grandjean, Jean-François Carlin, Julien Dorsaz, Antonino Francesco Castiglia, Jean-Michel Jacques Lamy, Dmitri Boiko, Luca Alex Milo Sulmoni, Xi Zeng

We have studied multi-section InGaN multiple-quantum-well (MQW) laser diodes grown on c-plane freestanding GaN substrate consisting of an absorber section (AS) and an amplifier gain section. As a result of the interplay between external bias applied to the ...

Amer Inst Physics2012

Page 3 of 3