Gözde Tütüncüoglu

Cette personne n’est plus à l’EPFL

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Publications associées (50)

Tuning the response of non-allowed Raman modes in GaAs nanowires

Anna Fontcuberta i Morral, Federico Matteini, Esther Alarcon Llado, Gözde Tütüncüoglu, Emanuele Uccelli, Francesca Amaduzzi, Hubert Hautmann

We report on the use of photonic resonances in Raman spectroscopy on single nanowires for the enhancement of forbidden modes and the study of the interaction of phonons with free-carriers. This is achieved by suspending nanowire over a trench and detecting ...

Iop Publishing Ltd2016

From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires

Anna Fontcuberta i Morral, Federico Matteini, Gözde Tütüncüoglu, Esther Alarcon Llado, Francesca Amaduzzi, Martin George Friedl, Heidi Andrea Potts

III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as In As and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, ...

American Chemical Society2016

Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

Anna Fontcuberta i Morral, Federico Matteini, Gözde Tütüncüoglu, Heidi Andrea Potts, Dmitry Mikulik, Jean-Baptiste Leran, Jelena Vukajlovic Plestina, William Craig Carter

Ga-catalyzed growth of GaAs nanowires on Si is a candidate process for achieving seamless III/V integration on IV. In this framework, the nature of silicon's surface oxide is known to have a strong influence on nanowire growth and orientation and therefore ...

American Chemical Society2016

Towards defect-free 1-D GaAs/AlGaAs heterostructures based on GaAs nanomembranes

Anna Fontcuberta i Morral, Davide Deiana, Federico Matteini, Gözde Tütüncüoglu, Heidi Andrea Potts

We demonstrate the growth of defect-free zinc-blende GaAs nanomembranes by molecular beam epitaxy. Our growth studies indicate a strong impact of As-4 re-emission and shadowing in the growth rate of the structures. The highest aspect ratio structures are o ...

Royal Soc Chemistry2015

Bottom-up engineering of InAs at the nanoscale: From V-shaped nanomembranes to nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Sonia Conesa Boj, Anna Dalmau Mallorquí, Eleonora Russo, Ignasi Canales Mundet

The ability to rationally tune the morphology of nanostructures is a fundamental milestone in nanoscale engineering. In particular, the possibility to switch between different shapes within the same material system represents a further step in the developm ...

Elsevier2015

Wetting of Ga on SiOx and Its Impact on GaAs Nanowire Growth

Federico Matteini, Gözde Tütüncüoglu, Heidi Andrea Potts, Fauzia Jabeen

Ga-assisted growth of GaAs nanowires on silicon provides a path for integrating high-purity III-Vs on silicon. The nature of the oxide on the silicon surface has been shown to impact the overall possibility of nanowire growth and their orientation with the ...

American Chemical Society2015

High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga

Anna Fontcuberta i Morral, Federico Matteini, Gözde Tütüncüoglu, Eleonora Russo, Sonia Conesa Boj, Anna Dalmau Mallorquí, Heidi Andrea Potts, Jelena Vukajlovic Plestina

GaAs nanowire arrays on Silicon offer great perspectives in the :optoeleetronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nano-wires in the form of array ...

American Chemical Society2015

Magnetization reversal of an individual exchange-biased permalloy nanotube

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Dirk Grundler, Federico Matteini

We investigate the magnetization reversal mechanism in an individual permalloy (Py) nanotube (NT) using a hybrid magnetometer consisting of a nanometer-scale SQUID (nanoSQUID) and a cantilever torque sensor. The Py NT is affixed to the tip of a Si cantilev ...

American Physical Society2015

Nonstoichiometric Low-Temperature Grown GaAs Nanowires

Anna Fontcuberta i Morral, Federico Matteini, Gözde Tütüncüoglu, Heidi Andrea Potts, Tao Xu

The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump probe reflectivity, and cathodoluminescence measurements. The growth o ...

American Chemical Society2015

Hybrid Semiconductor Nanowire-Metallic Yagi-Uda Antennas

Anna Fontcuberta i Morral, Federico Matteini, Alberto Casadei, Gözde Tütüncüoglu, Mohammad Ramezani

We demonstrate the directional emission of individual GaAs nanowires by coupling this emission to Yagi-Uda optical antennas. In particular, we have replaced the resonant metallic feed element of the nanoantenna by an individual nanowire and measured with t ...

American Chemical Society2015

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