Electrical properties of functionalized nanowire field effect transistors
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The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric rando ...
Scaling of semiconductor devices has pushed CMOS devices close to fundamental limits. The remarkable success story of Moore's law during the last 40 years, predicting the evolution of electronic device performances related to miniaturization, has always be ...
The goal of this thesis is to contribute to the understanding of charge transport in organic field-effect transistors (OFETs) made of pentacene. Organic thin-film transistors (OTFTs) with active layers thicknesses of 5, 10, 20, and 100 nm were fabricated i ...
We apply metal organic chemical vapour deposition (MOCVD) of HfO2 and of ZrO2 from beta-diketonate precursors to grow high-k gate dielectrics for InAlN/AlN/GaN metal oxide semiconductor (MOS)-high electron mobility transistors (HEMTs). High-k oxides of abo ...
Combination of ferroelectric layers and semiconductor heterostructures with 2D electron gas may lead to a number of new applications from high-mobility field effect transistors with ferroelectric gates to quantum dots patterned with polarization domains at ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007
The aim of this research is to develop and to evaluate devices and circuits performances based on ultrathin nanograin polysilicon wire (polySiNW) dedicated to room temperature operated hybrid CMOS-"nano" integrated circuits. The proposed polySiNW device is ...
We have investigated two possible fields of application for carbon nanotube (CNT) networks in flexible displays. Transparent and conductive layers of CNTs were spray coated onto glass and plastic substrates. The spectral transmission of the produced layers ...
Several organic and inorganic materials have emerged as promising candidates for the active layer of field-effect transistors (FETs) fabricated on flexible substrates. The charge transport models necessary for device optimization in these systems are at di ...
International Society for Optical Engineering, Bellingham WA, WA 98227-0010, United States2007
Organic FET transistors (OFETs) were fabricated on silicon substrates using pentacene as active organic layer and gold source and drain contacts. OFETs were used as test structures in order to study carriers photogeneration effect in organic layers. Photog ...
Several organic and inorganic materials have emerged as promising candidates for the active layer of field-effect transistors (FETs) fabricated on flexible substrates. The charge transport models necessary for device optimization in these systems are at di ...
Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2007
