Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

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Band alignment at beta-Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations

Alfredo Pasquarello, Sai Lyu

The band alignment and the chemical bonding at the beta -Ga2O3/AlN and beta -Ga2O3/GaN interfaces are studied through hybrid functional calculations. We construct realistic slab models with III-O (III = Al, Ga) bonds dominating the chemical bonding at both ...

2020

Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces

Giulia Tagliabue

Among all plasmonic metals, copper (Cu) has the greatest potential for realizing optoelectronic and photochemical hot-carrier devices, thanks to its CMOS compatibility and outstanding catalytic properties. Yet, relative to gold (Au) or silver (Ag), Cu has ...

AMER CHEMICAL SOC2020

Nanosecond pulsed laser-processing of CVD diamond

Patrik Willi Hoffmann, Marco Cantoni, Sébastien Equis

This work considers the resulting material structural effects of laser-processing chemical vapor deposited (CVD) diamond. The utilized 532 nm wavelength laser had a pulse duration of 40 ns together with a spot diameter of ca. 40 mu m. The effect of cutting ...

ELSEVIER SCI LTD2020

Impact of Strain and Alloy Disorder on the Electronic Properties of III-Nitride Based Two-dimensional Electron Gases

Pirouz Sohi

Over the past 20 years, III-nitrides (GaN, AlN, InN and their alloys) have proven to be an excellent material group for electronic devices, in particular, for high electron mobility transistors (HEMTs) operating at high frequency and high power. This is ma ...

EPFL2019

Short cavity InGaN-based laser diodes with cavity length below 300 mu m

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Denis Martin, Hua Zhang, Ching-Wen Shih

We report on a practical method for developing InGaN-based edge emitting laser diodes of cavity length down to 45 mu m. Samples consisting of one uncoated cleaved facet and one etched facet coated with a high-reflectivity (HR) dielectric distributed Bragg ...

2019

Visible-near-middle infrared spanning supercontinuum generation in a silicon nitride (Si3N4) waveguide

Tobias Kippenberg, Junqiu Liu, Wenle Weng

We demonstrate the generation of a supercontinuum spanning more than 1.5 octaves over the 1.2-3.7 mu m range in a silicon nitride waveguide using sub-40-fs pulses at 2.35 mu m generated by a 75 MHz Kerr-lens mode-locked Cr:ZnS laser. (C) 2019 Optical Socie ...

2019

GaN Quantum Dots for Room Temperature Excitonic Physics

Sebastian Pascal Tamariz Kaufmann

Quantum dots (QDs) are the result of quantum confinement in the three spatial directions, as such they exhibit remarkable properties, of which the most important is perhaps the absence of a continuum of states. The allowed energetic levels are discrete, si ...

EPFL2019

Halogen-bond driven self-assembly of perfluorocarbon monolayers on silicon nitride

Nicola Marzari, Antonio Abate, Ngoc Linh Nguyen

The self-assembly of a single layer of organic molecules on a substrate is a powerful strategy to modify surfaces and interfacial properties. Thiolates, silanes, phosphonates and carboxylates are widely used head-groups to link organic molecules to specifi ...

Royal Society of Chemistry2019

Elucidating the role of the InGaN UL in the efficiency of InGaN based light-emitting diodes

Camille Haller

Blue III-nitride light-emitting diodes (LEDs) are widely used nowadays in solid-state lighting, as white light can be produced by combining yellow phosphors and blue LEDs. This technology has the advantage to have a higher luminous efficiency than incandes ...

EPFL2019

Ultrafast carrier dynamics in III-nitride nanostructures and LED quantum efficiency

Wei Liu, Wei Liu

Since the seminal report about the first Candela- class-brightness InGaN blue light- emitting diodes (LEDs) by Shuji Nakamura et al. in 1994, III-nitride semiconductors have been one of the most important platforms for optoelectronic devices. The achieve ...

EPFL2019

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