Numerical simulations of hole carrier selective contacts in p-type c-Si solar cells
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The concepts of lifetime and relaxation semiconductors introduced by van Roosbroeck and Casey are reconsidered for amorphous semiconductors and the effect of localized states on the lifetime/relaxation criterion specified: The quantity to be considered is ...
In contrast to optical immunosensors, the electrochemical detection of an immunoanalytical reaction does require a labeling, but allows an easier discrimination of specific and non-specific binding. We present a concept and first results for a multivalent ...
Thin, hydrogenated silicon and carbon containing films have been deposited by the siliconization procedure on targets made from some metal alloys, pure metals, graphite and Si single crystal. The deposits were investigated by electron microprobe and surfac ...
A monolithic silicon integrated optical micro-scanner is presented. The device consists of a mirror located an the tip of a thermal bimorph actuator beam. The fabrication process is very simple and compatible with IC fabrication techniques. The device is e ...
Conformal epitaxy is an epitaxial growth technique capable of yielding low dislocation density III-V films on Silicon. In this technique, the growth of the m-V material occurs parallel to the silicon substrate, from the edge of a previously deposited III-V ...
A monolithic silicon integrated optical micro-scanner is presented. The device consists of a mirror located on the tip of a thermal bimorph actuator beam. The fabrication process is very simple and compatible with IC fabrication techniques. The device is e ...
Reasonable consistency between experimental data for the ambipolar diffusion length and experimental data for the photoconductivity is demonstrated for steady-state measurements performed on a-Si:H layers. This consistency is obtained based on the ''standa ...
We have designed and realised a new type of microsystem for the electrical characterisation of arrays of living cells for biomedical diagnostic purposes. We have used deep plasma etching for the fabrication of microholes and micro-fluidic channels in silic ...
Microcavity light-emitting diodes (MCLEDs) with top-emitting geometry have been grown by molecular beam epitaxy on GaAs and Si substrates. External quantum efficiencies of up to 10% were obtained for 420 x 420 mu m(2) homoepitaxial devices. The efficiency ...