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Internal photoemission (IPE) measurements of the conduction band discontinuities at GaAs/amorphous-Ge interfaces have been carried out at the Vanderbilt Free-Electron Laser (FEL). IPE is a simple and direct measurement capable of unprecedented accuracy. Th ...
A review of experimental results obtained by different techniques is presented on the problem of zinc diffusion. Zinc diffusion was carried out on Si-doped GaAs (n almost-equal-to 10(18) cm-3) and on multiple quantum well (MQW) structures. The samples were ...
A steady state photoluminescence experiment is reported investigating the lifetime of an electron-hole plasma confined in a quintum well. The results are compared with theoretical evaluations of the pure radiative decay rate and good agreement is found. Th ...
A high-power sheet beam electron gun for a quasi-optical gyrotron has been developed. The gun produces two beams with rectangular cross sections, with one beam segmented into 11 beamlets. These beamlets are spaced so as to be in line with the maxima of the ...
To study the effect of damage induced during the Zn diffusion on the properties of the material, p-n junctions, obtained by zinc diffusion, are investigated by electron beam induced current (EBIC) at different temperatures. At helium temperature, the EBIC ...
We present the first results of high-spatial resolution x-ray imaging studies with an upgraded version of the scanning photoemission multiple application x-ray imaging undulator microscope. The microscope is a multilayer coated Schwarzschild objective that ...
The resolution of TEM fluorescent screens is one of the limiting factors for the acquisition of CCTV images with a high definition (1024 x 1024 pixels or more). Our comparison between YAG single crystal and ZnCdS powder phosphors screens shows that this l ...
We have characterized an immunosuppressive parvovirus related to the minute virus of mice (MVM). The parvovirus, MVM(i), grew efficiently on the murine lymphoma cell line EL-4 and not on the A-9 strain of L-cells which is a host for the prototype MVM. MVM( ...
The lateral transport of excess carriers in metal organic chemical vapor deposition grown GaAs/AlxGa1-xAs(x=0.5) 20 angstrom thick single quantum well structures is studied by cathodoluminescence (CL) between 5 K less-than-or-equal-to T less-than-or-equal- ...