Semiconductor memory cell, array, architecture and device, and method of operating same

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Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

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Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

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HPCache: memory-efficient OLAP through proportional caching revisited

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Analytical engines rely on in-memory data caching to avoid storage accesses and provide timely responses by keeping the most frequently accessed data in memory. Purely frequency- and time-based caching decisions, however, are a proxy of the expected query ...

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Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

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The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over ti ...

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Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

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GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

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On Energy Control of Modular Multilevel Converters

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Owing to the advancements in the area of power electronics, efficient and flexible ac to dc conversion is made possible, bringing back into focus the idea of the dc power transmission at various voltage levels. Several technical and economical factors advo ...

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Impact of Interface Traps in Floating-Gate Memory Based on Monolayer MoS2

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Two-dimensional materials (2DMs) have found potential applications in many areas of electronics, such as sensing, memory systems, optoelectronics, and power. Despite an intense experimental work, the literature is lacking of accurate modeling of nonvolatil ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

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Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

EPFL2022

Energy Efficient Sensing using Steep Slope Devices

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Today, we are witnessing the Internet of Things (IoT) revolution, which facilitates and improves our lives in many aspects, but comes with several challenges related to the technology deployment at large scales. Handling ever growing amounts of information ...

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In-Memory Hardware and Architectural Extensions for Workloads Acceleration

William Andrew Simon

Utilization of edge devices has exploded in the last decade, with such use cases as wearable devices, autonomous driving, and smart homes. As their ubiquity grows, so do expectations of their capabilities. Simultaneously, their formfactor and use cases lim ...

EPFL2022

Method for reading and writing unreliable memories and a corresponding memory controller device and memory

Andreas Peter Burg, Reza Ghanaatian Jahromi

A method of accessing a memory space of a memory device with a decoder, the memory space having faults, including the steps of performing a memory access operation by an electronic device to a access a logical memory space of the memory device, and randomi ...

2022

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