Publications associées à Stretchable and Highly Bendable Thin Film Transistors Based on Atomically Thin Chemical Vapor Deposited Molybdenum Disulfide

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

An adaptive phase field approach to 3D internal crack growth in rocks

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Modeling the 3D internal crack under compression entails complex fracture mechanics (mode I-II-III fracture), resulting in substantial computational costs and challenges in characterizing fracture morphology characterization for Phase Field Method (PFM) si ...

2024

Two-dimensional quasi-static delamination in composite laminates under Mode-I and Mode-II conditions

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Fiber-polymer composites consist of a polymer matrix and reinforcing fibers made of various materials. These composites exhibit exceptional properties, such as a high strength-to-weight ratio and excellent corrosion resistance, which has led to their incre ...

EPFL2024

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

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Sensing and imaging of light in the shortwave infrared (SWIR) range is increasingly used in various fields, including bio-imaging, remote sensing, and semiconductor process control. SWIR-sensitive organic photodetectors (OPDs) are promising because organic ...

EPFL2024

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

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Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

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The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

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Optimizing Atomic Layer Deposition Processes with Nanowire-Assisted TEM Analysis

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Atomic layer deposition (ALD) is one of the premier methods to synthesize ultra-thin materials on complex surfaces. The technique allows for precise control of the thickness down to single atomic layers, while at the same time providing uniform coverage ev ...

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Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

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In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...

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Advanced Silicon and SWIR Single-Photon Avalanche Diodes: Design, Simulation, and Characterization

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Low-level light detection with high spatial and timing accuracy is a growing area of interest by virtue of applications such as light detection and ranging (LiDAR), biomedical imaging, time-resolved Raman spectroscopy, and quantum applications. Single-phot ...

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Lithium tantalate photonic integrated circuits for volume manufacturing

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Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO3) have demonstrated the vast capabilities of materials with a high Pockels coefficient1,2. They enable linear and high-speed modulators operating at complementary metal–oxi ...

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