Process-induced skew variation for scaled 2-D and 3-D ICs

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Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2

Aleksandra Radenovic, Andras Kis, Mukesh Kumar Tripathi, Guilherme Migliato Marega, Zhenyu Wang

Machine learning and signal processing on the edge are poised to influence our everyday lives with devices that will learn and infer from data generated by smart sensors and other devices for the Internet of Things. The next leap toward ubiquitous electron ...

2022

Ultra low quantum decoherence nano-optomechanical systems

Mohammadjafar Bereyhi

Thermal motion of a room-temperature mechanical resonator typically dominates the quantum backaction of its position measurement. This is a longstanding barrier for exploring cavity optomechanics at room temperature. In order to enter the quantum regime of ...

EPFL2022

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Carlotta Gastaldi

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

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A 500 x 500 Dual-Gate SPAD Imager With 100% Temporal Aperture and 1 ns Minimum Gate Length for FLIM and Phasor Imaging Applications

Edoardo Charbon, Claudio Bruschini, Andrei Ardelean, Paul Mos, Arin Can Ülkü, Michael Alan Wayne

In this article, we report on SwissSPAD3 (SS3), a 500 x 500 pixel single-photon avalanche diode (SPAD) array, fabricated in 0.18-mu m CMOS technology. In this sensor, we introduce a novel dual-gate architecture with two contiguous temporal windows, or gate ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Scalable fabrication of functional nanostructures on stretchable substrates by capillary-assisted particle assembly and adhesion lithography

Henry Shao-Chi Yu

The fabrication of metallic nanostructures on stretchable substrates enables specific applications that exploit the combination of the nano-scale phenomena and the mechanical tunability of the physical dimensions of the nanostructures. Due to the large dif ...

EPFL2022

Thermal and Voltage-Aware Performance Management of 3D MPSoCs with Flow Cell Arrays and Integrated SC Converters

David Atienza Alonso, Marina Zapater Sancho, Giovanni Ansaloni, Alexandre Sébastien Julien Levisse, Halima Najibi

Flow cell arrays (FCAs) concurrently provide efficient on-chip liquid cooling and electrochemical power generation. This technology is especially promising for three-dimensional multi-processor systems-on-chip (3D MPSoCs) realized in deeply scaled technolo ...

2022

DASS: Combining Dynamic & Static Scheduling in High-Level Synthesis

Paolo Ienne, Lana Josipovic

A central task in high-level synthesis is scheduling: the allocation of operations to clock cycles. The classic approach to scheduling is static, in which each operation is mapped to a clock cycle at compile-time, but recent years have seen the emergence o ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Electrical Spectroscopy of Defect States in Synthetic 2D Materials

Yanfei Zhao

Two-dimensional (2D) materials such as graphene and transition metal dichalcogenide (TMDC) are considered as one of the most promising material platforms for future electronic devices, due to their ultra-thin thickness and fascinating electrical and optica ...

EPFL2022

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Kilowatt-range Picosecond Switching Based on Microplasma Devices

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani

Plasma formation in micro- and nano-scales enables an ultrahigh-dv/dt picosecond switching in an integrated circuit form factor. Such on-chip plasma devices could provide a transformative approach to achieving high-power levels at very high frequencies, fa ...

Institute of Electrical and Electronics Engineers2021

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Scalable fabrication of functional nanostructures on stretchable substrates by capillary-assisted particle assembly and adhesion lithography

Henry Shao-Chi Yu

EPFL2022

A 500 x 500 Dual-Gate SPAD Imager With 100% Temporal Aperture and 1 ns Minimum Gate Length for FLIM and Phasor Imaging Applications

Edoardo Charbon, Claudio Bruschini, Andrei Ardelean, Paul Mos, Arin Can Ülkü, Michael Alan Wayne

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Kilowatt-range Picosecond Switching Based on Microplasma Devices

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani

Institute of Electrical and Electronics Engineers2021