Dose dependence of luminescence increase in H2-loaded Bi-Al co-doped optical fibers by cw 244-nm and pulsed 193-nm laser irradiation

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Thermal decay of UV Ar+ and ArF excimer laser fabricated Bragg gratings in SMF-28e and Bi-Al-doped optical fiber

Hans Georg Limberger, Georgios Violakis, Pouneh Saffari

Fiber Bragg Gratings were fabricated using a 193-nm-ArF-excimer laser with ac index changes of 0.6×10E-4 and 2.2×10E-4 in pristine and H2-loaded Bi-Al-SiO2 fibers. Thermal annealing of the FBGs was investigated using continuous isochronal annealing. ...

2012

Thermal decay of ArF-excimer-laser fabricated fiber Bragg gratings in Bi-Al-doped optical fibers

Hans Georg Limberger, Georgios Violakis, Pouneh Saffari

2012

Fabrication of Bragg Gratings in Microstructured Bi:SiO2 Optical Fiber Using an ArF Laser

Hans Georg Limberger, Georgios Violakis

An ArF excimer laser was used to fabricate Bragg gratings in Bi:SiO2 core - microstructured cladding optical fiber. Average and modulated refractive index changes of 2.7 × 10E-4 and 1.0 × 10E-4 were induced in pristine fiber. Fiber luminescence was also me ...

IEEE2012

Fabrication of Bragg gratings in microstructured and step index Bi-SiO2 optical fibers using an ArF laser

Hans Georg Limberger, Georgios Violakis

An ArF excimer laser was used to fabricate Bragg gratings in fibers with Bi-SiO2 core and microstructured or F-doped claddings without fiber presensitization. Average and modulated refractive index changes of 2.7 x 10(-4) and 1.0 x 10(-4) were induced in p ...

Optical Society of America2012

Witnessing the early semiconductor laser development at Bell Telephone Laboratories, Inc

Franz-Karl Reinhart

This paper gives a personal account of the research and development work at Bell Telephone Laboratories, Inc. during the first ten years following the first demonstration of semiconductor injection lasers. ...

Iop Publishing Ltd2012

Deep-ultraviolet picosecond flat-top pulses by chirp-matched sum frequency generation

Christoph Peter Hauri

Picosecond, flat-top, deep-UV pulses are needed to generate high-brightness electron beams to efficiently drive x-ray free electron lasers. Current metal photocathodes have low efficiency and therefore require high-energy pulses, and the generation of high ...

2012

Photosensitivity and stress changes of Ge-free Bi-Al doped silica optical fibers under ArF excimer laser irradiation

Hans Georg Limberger, Christian Ban

The photosensitivity of germanium free Bi-Al-doped silica fibers with different bismuth concentrations was investigated using ArF excimer laser radiation at 193 nm and fiber grating formation. For the fiber with the highest bismuth concentration maximum re ...

Optical Society of America2011

Intrinsic Emittance Reduction of an Electron Beam from Metal Photocathodes

Christoph Peter Hauri

Electron beams in modern linear accelerators are now becoming limited in brightness by the intrinsic emittance of the photocathode electron source. Therefore it becomes important for large scale facilities such as free electron lasers to reduce this fundam ...

2010

Infrared Luminescence Enhancement by UV-Irradiation of H2-loaded Bi-Al-doped Fiber

Hans Georg Limberger, Christian Ban

ArF excimer laser irradiation of H2-loaded fibers increases the intensity of both the 1130 and 1390 nm fluorescence in Bi-Al-doped silica fiber by 18 dB and >16 dB. ...

2009

Low-order distributed feedback optofluidic dye laser with reduced threshold

Demetri Psaltis, Andreas Vasdekis, Wuzhou Song

We report the demonstration of low order distributed feedback (DFB) optofluidic dye lasers with reduced threshold. The laser chips were realized in polydimethylsiloxane using replica molding with two masters. A comparison between first, second, and third o ...

2009

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2009

Low-order distributed feedback optofluidic dye laser with reduced threshold

Demetri Psaltis, Andreas Vasdekis, Wuzhou Song

2009

Deep-ultraviolet picosecond flat-top pulses by chirp-matched sum frequency generation

Christoph Peter Hauri

2012