Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband

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Unidirectional isolator-free 2 micron fiber lasers

Svyatoslav Kharitonov

This thesis presents results of a research on unidirectional isolator-free cavity lasers, exploiting thulium-doped fiber (TDF) as amplification medium and operating in \unit[2]{\mu m} wavelength range. For fibre ring resonator, an optical isolator should b ...

EPFL2017

Effect of Cavity Lifetime Variation on the Static and Dynamic Properties of 1.3-μm Wafer-Fused VCSELs

Elyahou Kapon, Grigore Suruceanu, Alexandru Mereuta, Vladimir Iakovlev, Alexei Sirbu, Andrei Caliman, Zlatko Mickovic, Dalila Ellafi

We investigate experimentally the impact of photon cavity lifetime variations on the static and dynamic performance of high-speed 1.3-mu m wavelength wafer-fused vertical-cavity surface-emitting lasers (VCSELs). The photon lifetime is modified by decreasin ...

Ieee-Inst Electrical Electronics Engineers Inc2015

750 nm 1.5 W frequency-doubled semiconductor disk laser with a 44 nm tuning range

Elyahou Kapon, Vladimir Iakovlev, Alexei Sirbu

We demonstrate 1.5 W of output power at the wavelength of 750 nm by intracavity frequency doubling a wafer-fused semiconductor disk laser diode-pumped at 980 nm. An optical-to-optical efficiency of 8.3% was achieved using a bismuth borate crystal. The wave ...

Optical Society of America2015

Isolator-free unidirectionalthulium-doped fiber laser

Camille Sophie Brès, Svyatoslav Kharitonov

We report the first demonstration of a unidirectional, isolator-free 2-mmthulium-doped fiber (TDF) laser, relying on the properties of the theta cavity (ring resonator with S-shaped feedback). The core pumped theta cavity TDF laser provides sub-Watt output ...

2015

Analysis of structurally sensitive loss in GaN-based VCSEL cavities and its effect on modal discrimination

Nicolas Grandjean, Gatien Cosendey, Ehsan Hashemi

Lateral loss causes optical energy to leave the laser cavity in the transverse, lateral, direction, and is sometimes neglected to simplify the numerical simulations. However, in contrast to outcoupling and absorption losses, we show that the lateral loss c ...

Optical Soc Amer2014

Wafer-fused VECSELs emitting in the 1310 nm waveband

Elyahou Kapon, Nicolas Volet, Alexandru Mereuta, Vladimir Iakovlev, Alexei Sirbu, Andrei Caliman, Kamil Pawel Pierscinski

Optically pumped wafer fused 1310 nm VECSELs have the advantage of high output power and wavelength agility. Gain mirrors in these lasers are formed by direct bonding of InAlGaAs/InP active cavities to Al(Ga) As/GaAs DBRs. We present for the first time Wat ...

Spie-Int Soc Optical Engineering2014

Analysis and Control of Optical Modes in VCSELs and VCSEL-Arrays

Elodie Lamothe

In this thesis, we studied the modal structure and the polarization of the optical field emitted by vertical-cavity surface-emitting lasers (VCSELs) emitting in the short- and long-wavelength domains (0.9-1.3μm). Our study concerns two types of components: ...

EPFL2013

Polarization mode structure in long-wavelength wafer-fused vertical-cavity surface-emitting lasers

Elyahou Kapon, Grigore Suruceanu, Nicolas Volet, Alexandru Mereuta, Vladimir Iakovlev, Alexei Sirbu, Andrei Caliman

Applications of long-wavelength (lambda > 1 mu m) vertical-cavity surface-emitting lasers (VCSELs) generally require close control over wavelength and polarization of the emitted light. In most cases, single mode and polarization stable lasing is desired. ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2012

Wafer-Fused 1310 nm and 1550 nm Mode-Locked Semiconductor Disk Lasers

Elyahou Kapon, Alexandru Mereuta, Vladimir Iakovlev, Alexei Sirbu, Andrei Caliman

We report on fabrication and performance of wafer fused, high power, passively mode-locked semiconductor disc lasers operating in 1310 nm and 1550 nm bands. These devices comprise gain mirrors based on InAlGaAs/InP multi quantum well active regions fused t ...

Ieee2011

Recent Progress in Wafer-Fused VCSELs Emitting in the 1550-nm Band

Elyahou Kapon, Grigore Suruceanu, Alexandru Mereuta, Vladimir Iakovlev, Alexei Sirbu, Andrei Caliman

Record-high fundamental mode output power of 1.5 mW at 100 degrees C is achieved with InAlGaAs-InP/AlGaAs-GaAs 1550 nm wavelength vertical cavity surface emitting lasers (VCSELs) produced by a modified wafer fusion technique. A broad wavelength setting on ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2011

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