Publications associées à Non-volatile ferroelectric gating of magnetotransport anisotropy in (Ga,Mn)(As,P)

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Molecular intercalation in the van der Waals antiferromagnets FePS3 and NiPS3

Bruce Normand, Ying Chen, Sheng Xu, Shuo Li, Xiaoyu Xu, Zeyu Wang, Weiqiang Yu

We have performed electrochemical treatment of the van der Waals antiferromagnetic materials FePS3 and NiPS3 with the ionic liquid EMIM-BF4, achieving significant molecular intercalation. Mass analysis of the intercalated compounds, EMIMx-FePS3 and EMIMx-N ...

Amer Physical Soc2024

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Mohammad Khaja Nazeeruddin, Olga Syzgantseva

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

Nature Portfolio2024

Magnetism of Single Surface Adsorbed Atoms Studied with Radio-Frequency STM

Clément Marie Soulard

This thesis investigates the magnetic properties of single atoms and molecules adsorbed on thin magnesium oxide decoupling layers, grown on a silver single crystal. To address these systems experimentally, we use a low temperature scanning tunneling micros ...

EPFL2024

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Elison de Nazareth Matioli, Zheng Hao, Alessandro Floriduz

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

2024

Magnon-Assisted Magnetization Reversal of Ni81Fe19 Nanostripes on Y3Fe5O12 with Different Interfaces

Dirk Grundler, Andrea Mucchietto, Korbinian Baumgärtl

Magnetic bit writing by short-wave magnons without conversion to the electrical domain is expected to be a game-changer for in-memory computing architectures. Recently, the reversal of nanomagnets by propagating magnons was demonstrated. However, experimen ...

2024

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

EPFL2023

Spin Textures in 2D Magnets

Lukas Powalla

The continuous reduction of the structural size in nanotechnology slowed down over the last decade, approaching the natural limit of single atoms as building blocks of matter. Therefore, intensive research is directed toward exploring new frontiers, in par ...

EPFL2023

2D Nanosystems: Applications of 2D Semiconductors for In-Memory Computing

Guilherme Migliato Marega

Machine learning and data processing algorithms have been thriving in finding ways of processing and classifying information by exploiting the hidden trends of large datasets. Although these emerging computational methods have become successful in today's ...

EPFL2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023