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Compensation mechanism in silicon-doped gallium arsenide nanowires

Publications associées (31)

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Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Yao Chen

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

EPFL2024

Elimination of buried interfacial voids for efficient perovskite solar cells

Bin Ding, Xianfu Zhang, Bo Chen, Yan Liu

Establishing optimal interfacial contact is crucial for enhancing the efficiency of perovskite solar cells (PSCs). However, formation of voids at buried interface of perovskite films often hinders this critical objective. Our investigation reveals that the ...

Elsevier2024

Plasmonic Nanostructures for Photocatalysis: Material, Photonic and Electronic Effects

Fateme Kiani Shahvandi

Plasmonic photochemistry has a large potential to replace energy-intensive chemical processes with low-temperature, low-pressure light-driven chemical reactions. Plasmonic nanostructures have emerged as promising photocatalysts with exceptional and tunable ...

EPFL2024

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

Didem Dede

Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

EPFL2024

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Mohammad Khaja Nazeeruddin, Olga Syzgantseva

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

Nature Portfolio2024

A comprehensive physical model for the sensitivity of silicon heterojunction photovoltaic modules to water ingress

Christophe Ballif, Alessandro Francesco Aldo Virtuani, Luca Gnocchi, Olatz Arriaga Arruti

Silicon heterojunction (SHJ)-solar modules-when encapsulated with ethylene vinyl acetate (EVA)-are known to be extremely sensitive to water ingress. The reason for this is, however, not clear. Here, we explain the root causes of this degradation mechanism ...

Cell Press2024

Phase-stable indium sulfide achieves an energy conversion efficiency of 14.3% for solar-assisted carbon dioxide reduction to formate

Michael Graetzel, Jing Gao, Jingshan Luo, Xiaoyu Zhang, Jun Li, Qixing Zhang

Tremendous efforts have been made in developing highly selective catalysts for electrochemical CO 2 conversion to formate. However, the rapid deactivation resulting from structural reconstruction and phase transition poses considerable challenges to the sy ...

Cell Press2024

Alleviating nanostructural phase impurities enhances the optoelectronic properties, device performance and stability of cesium-formamidinium metal-halide perovskites

Christophe Ballif, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Christian Michael Wolff, Beat Ruhstaller, Daniel Anthony Jacobs, Austin George Kuba, Mostafa Rabie Shlaly Bahr Othman, Anaël Morgane Jaffrès

The technique of alloying FA+ with Cs+ is often used to promote structural stabilization of the desirable alpha-FAPbI3 phase in halide perovskite devices. However, the precise mechanisms by which these alloying approaches improve the optoelectronic quality ...

Royal Soc Chemistry2024

Enhancing Efficiency of Industrially-Compatible Monolithic Perovskite/Silicon Tandem Solar Cells with Dually-Mixed Self-Assembled Monolayers

Mohammad Khaja Nazeeruddin, Peng Gao, Ye Yang, Chaohui Li

The antisolvent-assisted spin-coating still lags behind the thermal evaporation method in fabricating perovskite films atop industrially textured silicon wafers in making monolithic perovskite/silicon solar cells (P/S-TSCs). The inhomogeneity of hole-selec ...

Wiley-V C H Verlag Gmbh2024

Photo-doping of spiro-OMeTAD for highly stable and efficient perovskite solar cells

Michael Graetzel, Jacques-Edouard Moser, Kai Zhu, Etienne Christophe Socie, George Cameron Fish, Aaron Tomas Terpstra

A widely used component of high-efficiency perovskite solar cells (PSCs) is the molecular hole-transport material (HTM) spiro-OMeTAD. This organic solid needs to be p-doped to acquire sufficient hole conductivity. However, the conventional doping method us ...

2024

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Phase-stable indium sulfide achieves an energy conversion efficiency of 14.3% for solar-assisted carbon dioxide reduction to formate

Michael Graetzel, Jing Gao, Jingshan Luo, Xiaoyu Zhang, Jun Li, Qixing Zhang

Cell Press2024

Alleviating nanostructural phase impurities enhances the optoelectronic properties, device performance and stability of cesium-formamidinium metal-halide perovskites

Royal Soc Chemistry2024

Enhancing Efficiency of Industrially-Compatible Monolithic Perovskite/Silicon Tandem Solar Cells with Dually-Mixed Self-Assembled Monolayers

Mohammad Khaja Nazeeruddin, Peng Gao, Ye Yang, Chaohui Li

Wiley-V C H Verlag Gmbh2024

Photo-doping of spiro-OMeTAD for highly stable and efficient perovskite solar cells

Michael Graetzel, Jacques-Edouard Moser, Kai Zhu, Etienne Christophe Socie, George Cameron Fish, Aaron Tomas Terpstra

2024