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Source–Drain Partitioning in MOSFET

Publications associées (31)

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The subject of the present work is discovery and in-depth characterization of a new class of functional materials. Tuning of the bond polarity and orbital occupation with a goal of establishing balance between localization and delocalization of electrons - ...

EPFL2023

Nano-MOSFET - Foundation of Quantum Computing Part I

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As big strides were being made in many science fields in the 1970s and 80s, faster computation for solving problems in molecular biology, semiconductor technology, aeronautics, particle physics, etc., was at the forefront of research. Parallel and super-co ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

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GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

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Competition between Carrier Injection and Structural Distortions in Electron-Doped Perovskite Nickelate Thin Films

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The discovery of superconductivity in doped infinite-layer nickelate thin films has brought increased attention to the behavior of the doped perovskite phase. Despite this interest, the majority of existing studies pertain to hole-doped perovskite rare-ear ...

WILEY2023

Electronic metadevices for terahertz applications

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The evolution of electronics has largely relied on downscaling to meet the continuous needs for faster and highly integrated devices(1). As the channel length is reduced, however, classic electronic devices face fundamental issues that hinder exploiting ma ...

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Drift-Diffusion Simulations of Charge Transport and Trap Dynamics in Organic Semiconductor Materials

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Polymeric semiconductors have gained significant attention in the field of organic electronics due to their unique properties and potential applications. Through their ability to transport charge carriers and to absorb or emit light, they have attracted mu ...

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Understanding and mitigating resistive losses in fired passivating contacts: role of the interfaces and optimization of the thermal budget

Christophe Ballif, Aïcha Hessler-Wyser, Franz-Josef Haug, Audrey Marie Isabelle Morisset, Sofia Libraro, Julien Hurni, Luca Massimiliano Antognini, Ezgi Genç

This work presents a study of p-type passivating contacts based on SiCx formed via a rapid thermal processing (RTP) step, using conditions compatible with the firing used to sinter screen-printed metallization pastes in industry. The contributions of the t ...

Elsevier2023

Charge Dynamics Electron Microscopy Nanoscale Imaging of Femtosecond Plasma Dynamics

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Understanding and actively controlling the spatiotemporal dynamics of nonequilibrium electron clouds is fundamental for the design of light and electron sources, high power electronic devices, and plasma-based applications. However, electron clouds evolve ...

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Optimization of X-mode electron cyclotron current drive in high-electron-temperature plasma in the EAST tokamak

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A discharge with electron temperature up to 14 keV has been achieved in EAST. Analysis of the electron cyclotron current drive (ECCD) efficiency at high electron temperature under EAST parameters is presented using C3PO/LUKE code. Simulation results show t ...

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Experimental and numerical investigations of electron transport enhancement by electron-cyclotron plasma-wave interaction in tokamaks

Stefano Coda, Laurent Villard, Laurie Porte, Joan Decker, Giovanni Di Giannatale, Aylwin Iantchenko, Jean Arthur Cazabonne

Energy transfer from electron-cyclotron (EC) waves to the plasma is being routinely used in tokamaks to heat and drive current through the electron channel. Technical applications such as magnetohydrodynamic mode mitigation require power deposition with a ...

IOP Publishing Ltd2023