Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

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Publications associées (30)

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

EPFL2023

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Andras Kis, Oleg Yazyev, Mukesh Kumar Tripathi, Yanfei Zhao, Ahmet Avsar, Kristians Cernevics, Zhenyu Wang, Juan Francisco Gonzalez Marin, Cheol Yeon Cheon, Hyungoo Ji

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

Nature Research2023

Robust Analog Multisensory Array System for Lossy Capacitive Sensors Over Long Distances

Sandro Carrara, Andromachi Tsirou, Amar Kapic

A robust capacitive multisensory readout system is presented in this article. The system consists of a few thousand lossy capacitive-based sensors that can be modeled as a parallel connection of sensor capacitor and undesirable leakage resistance. The real ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Method and setup for light detection and ranging

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A method and a setup for light detection and ranging are disclosed. The setup is configured to carry out the following method: generating signal radiation (S) at multiple signal frequencies (fs) with an optical signal source (1), wherein the signal radiati ...

2023

Evaluation of neutron dose rates at the TCV tokamak facility

Patrick Blanchard, Henri Weisen, Matteo Vallar

A detailed MCNP neutronics model of the building housing the TCV tokamak has been developed. Predicted dose rates have been compared to neutron dose measurements at 12 locations in the building obtained during neutral beam injection into TCV plasmas. This ...

2023

Unraveling the Electrochemical Electrode Coupling in Integrated Organic Electrochemical Transistors

Matteo Cucchi, Hsin Tseng

Organic electrochemical transistors (OECTs) have gained enormous attention due to their potential for bioelectronics and neuromorphic computing. However, their implementation into real-world applications is still impeded by a lack of understanding of the c ...

WILEY-V C H VERLAG GMBH2023

Vacancy segregation and intrinsic coordination defects at (111) twist grain boundaries in diamond

Carolina Baruffi, Christian Brandl

High radiation damage resistance has become increasingly important for applications of functional materials in harsh environments. The high radiation damage resistance diamond cubic carbon is a unique material which is considered for radiation environments ...

Pergamon-Elsevier Science Ltd2023

Atomic-scale Characterization of Strain and Gate effects on Two-dimensional Materials by Scanning Tunneling Microscopy

Jz -Yuan Juo

Strain is an inevitable phenomenon in two-dimensional (2D) material, regardless of whether the film is suspended or supported. Moreover, strain is known to alter the physical and chemical properties, such as the band gap, charge carrier effective masses, d ...

EPFL2023

Radiation-tolerant Multichannel Dew Point Temperature Monitoring System for High Energy Physics Applications

Amar Kapic

The next generation of high-energy physics (HEP) detectors will predominantly be silicon-based. As pixel sensor technology gains momentum and the number of channels surpasses one billion (for a volume of approximately 20 m3) to achieve the high resolution ...

EPFL2023

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

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