Publication

Investigation on Output Capacitance Losses in Superjunction and GaN-on-Si Power Transistors

Publications associées (32)

A modular multiple frequency inductive link to wirelessly power multiple miniaturized implants

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A modular multiple frequency coils inductive link system to wirelessly provide power for at least a medical implant at an output of a receiving coil, whereby the receiving coil is configured to be implanted in an organism. The modular multiple frequency co ...

2024

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

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In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...

EPFL2024

An Ultralow-Power Triaxial MEMS Accelerometer With High-Voltage Biasing and Electrostatic Mismatch Compensation

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This article presents a triaxial micro electromechani-cal system (MEMS) capacitive accelerometer using a high-voltage biasing technique to achieve high resolution with ultralow power. The accelerometer system generates a differential pair of high voltages ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Measuring electrical properties in semiconductor devices by pixelated STEM and off-axis electron holography (or convergent beams vs. plane waves)

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We demonstrate the use of both pixelated differential phase contrast (DPC) scanning transmission electron microscopy (STEM) and off-axis electron holography (EH) for the measurement of electric fields and assess the advantages and limitations of each techn ...

Pergamon-Elsevier Science Ltd2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

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We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Stability Analysis of Second-Order Harmonic Active Filters for Input-Series/Output- Parallel Solid State Transformers

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Solid-State Transformers with Input-Series/Output- Parallel configuration offer a convenient solution for AC/DC power conversion, thanks to their modularity, scalability and flexibility. However, as known, they are affected by a second-order harmonic rippl ...

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DC Power Distribution Networks with Direct Current Transformers

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The shift towards DC power distribution networks, enabled by power electronics technologies, is changing the nature of electrical power systems. Nowadays, DC power distribution networks can effectively support the high penetration of distributed energy res ...

EPFL2024

Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

Elison de Nazareth Matioli, Hongkeng Zhu

Accurate characterization of the dynamic ON-resistance (RON) degradation is important to predict conduction losses for gallium nitride high-electron-mobility transistors (GaN HEMTs). However, even for the same device, many inconsistent results of dynamic R ...

2023

Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis

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In this paper, we review some of the main methods to characterize on-state and off-state losses in wide-band-gap devices under switching conditions. In the off-state, we will discuss about losses related to charging and discharging the output capacitance i ...

IEEE2023

Analysis and Design for Medium Voltage Dual Active Bridge Converter Based on Series-Connected SiC MOSFETs

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In this article, a series-connected SiC MOSFETs-based medium voltage (MV) dual active bridge (DAB) converter featuring a lowvoltage difference amongdevices and high efficiency is proposed. In the developed DAB converter, the zero voltage switching-on chara ...

Ieee-Inst Electrical Electronics Engineers Inc2023