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Investigation on Output Capacitance Losses in Superjunction and GaN-on-Si Power Transistors

Publications associées (32)

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Protection unit for wide bandgap power switching device and method for operating the wide bandgap power switching device

Drazen Dujic, Chengmin Li

The invention relates to a method for operating a power switching device, particularly a wide bandgap power switching device, in a power application, particularly in a converter, comprising the steps of:- checking (S2) a transient voltage of or related to ...

2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

On Energy Control of Modular Multilevel Converters

Milan Utvic

Owing to the advancements in the area of power electronics, efficient and flexible ac to dc conversion is made possible, bringing back into focus the idea of the dc power transmission at various voltage levels. Several technical and economical factors advo ...

EPFL2023

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Andras Kis, Oleg Yazyev, Mukesh Kumar Tripathi, Yanfei Zhao, Ahmet Avsar, Kristians Cernevics, Zhenyu Wang, Juan Francisco Gonzalez Marin, Cheol Yeon Cheon, Hyungoo Ji

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

Nature Research2023

A Front-End CMOS Interface Circuit With High Voltage Charge Pump and Oscillator for Capacitive Micromachined Ultrasonic Transducers

Sandro Carrara, Gian Luca Barbruni, Zhengwen Jiang, Yihe Zhao

Label-free biosensors, combined with miniaturized micro-electromechanical sensory platforms, offer an attractive solution for real-time and facile monitoring of biomolecules due to their high sensitivity and selectivity without the need for specifically la ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

EPFL2023

Dc-Link Ripple Suppression of Cascaded H-Bridge Based MV Grid Emulator Apparatus for Analysis and Testing of Grid-Tied Converters in Distribution System

Drazen Dujic, Chengmin Li, Jing Sheng, Xin Xiang

The medium-voltage grid emulator is gaining popularity for testing grid-code compliance of large-capacity converters for renewable energy resources. The cascaded H-bridge converter based on active-front-ends is a promising candidate for high-power grid emu ...

2023

Dynamics analysis for DC transformers integration in hybrid AC‐DC power distribution networks

Drazen Dujic, Andrea Cervone, Jules Christian Georges Macé, Max Dupont, Renan Pillon Barcelos

In AC/DC power distributions networks, power converters are interfacing buses to ensure DC voltage regulation and power distribution. Active front ends are used between AC and DC buses and two typical control schemes that can be implemented are voltage reg ...

2023

Broadband spectroscopy and inelastic light scattering on the canted antiferromagnet hematite for antiferromagnetic magnonics

Mohammad Hamdi

Collective spin excitations propagating in magnetically ordered materials are called spin waves (SWs) or magnons. They are promising for low-power and beyond-CMOS information processing, which do not suffer from the ohmic losses. SWs in ferromagnets (antif ...

EPFL2023

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A Front-End CMOS Interface Circuit With High Voltage Charge Pump and Oscillator for Capacitive Micromachined Ultrasonic Transducers

Sandro Carrara, Gian Luca Barbruni, Zhengwen Jiang, Yihe Zhao

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

EPFL2023

Dc-Link Ripple Suppression of Cascaded H-Bridge Based MV Grid Emulator Apparatus for Analysis and Testing of Grid-Tied Converters in Distribution System

Drazen Dujic, Chengmin Li, Jing Sheng, Xin Xiang

2023

Broadband spectroscopy and inelastic light scattering on the canted antiferromagnet hematite for antiferromagnetic magnonics

Mohammad Hamdi

EPFL2023