Publication

Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes

Publications associées (19)

Graphene negative differential resistance (GNDR) circuit with enhanced performance at room temperature

Mihai Adrian Ionescu, Arnaud Magrez, Antonios Bazigos, Laurent Syavoch Bernard, Pankaj Sharma

We propose and experimentally demonstrate a novel circuit based on graphene FETs (GFETs) showing excellent negative differential resistance (NDR) characteristics at room temperature. The proposed GNDR circuit exploits a closed loop connection of 1-GFET wit ...

IEEE2015

Influence of Molybdenum Oxide Interface Solvent Sensitivity on Charge Trapping in Bilayer Cyanine Solar Cells

Frank Nüesch, Roland Hany, Beat Ruhstaller

Bilayer organic solar cells based on trimethine cyanine donor and C-60 acceptor materials have been fabricated by coating the trimethine dye from solution on molybdenum oxide (MoO3) anode buffer layer. The choice of deposition solvent drastically influence ...

Amer Chemical Soc2014

Dynamic Analysis and State Feedback Voltage Control of Single-Phase Active Rectifiers with DC-Link Resonant Filters

Alfred Rufer, Michail Vasiladiotis

Single-phase active rectifiers exhibit an inherent strong second-order current harmonic on their DC-link. The latter is often undesirable from a load point of view and is therefore chosen to be eliminated. A common method is the use of a resonant passive L ...

Ieee-Inst Electrical Electronics Engineers Inc2014

Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm

Mihai Adrian Ionescu, Jean-Michel Sallese, Wladyslaw Grabinski, Mohammad Najmzadeh, Matthieu Berthomé

In this paper, we report the first systematic study on electron mobility extraction in equilateral triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm. 1 x 10(19) cm(-3) n-type channel doping, 5-20 nm Si nanowire wi ...

Pergamon-Elsevier Science Ltd2014

Dynamical Coulomb Blockade Observed in Nanosized Electrical Contacts

Wolf-Dieter Schneider, François Patthey, I-Po Hong

Electrical contacts between nanoengineered systems are expected to constitute the basic building blocks of future nanoscale electronics. However, the accurate characterization and understanding of electrical contacts at the nanoscale is an experimentally c ...

2012

Beyond Scaling : Physics and Modeling for Pushing the Frontiers of Low-Power Devices

Luca De Michielis

Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...

EPFL2012

Modeling methodology of high-voltage substrate minority and majority carrier injections

Maher Kayal, Jean-Michel Sallese, Fabrizio Lo Conte

This paper presents a modeling methodology for substrate current coupling mechanisms. An enhanced model of the diode ensuring continuity of minority carriers is used to build an equivalent schematic, accounting for minority and majority carrier propagation ...

2010

On performance of series connected CMOS vertical hall devices

Radivoje Popovic, Mirjana Banjevic

Series connected (stacked) CMOS vertical Hall devices were analyzed on the basis of performance of a single five contacts device biased at different common mode voltages with respect to the substrate. The uneven influence of junction field effect on residu ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2008

Ferroelectric Gate on AlGaN/GaN Heterostructures

Nava Setter, Paul Muralt, Igor Stolichnov, Lisa Malin

A PZT, Pb(Zr,Ti)O-3 (40:60), ferroelectric layer has been successfully deposited onto a Al0.3Ga0.7N/GaN heterostructure with a 2DEG, two dimensional electron gas. Due to the chemical and temperature stability of AlGaN/GaN it was possible to implement the c ...

IEEE2007