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This lecture covers the design preparation and fracture process in electron beam lithography, including field and shape fracture, conversion to 'shots', resolution, line edge roughness, and beam step size influence on writing time. It also discusses beam diameter scaling, shot placement optimization, and writing time calculation based on desired dose, writing area, and beam current. The lecture further explores the extrapolation to larger areas, writing schemes, field positioning, multiple pass strategies, and writing order considerations. Additionally, it touches on electron sample interaction, resist contrast, positive and negative resists, proximity effects, and alignment processes through practical examples.