Diode Characteristics: Ideal p-n Junction Analysis

This lecture covers the analysis of ideal p-n junction diodes, focusing on current calculations under forward and reverse bias conditions. It begins with the injection of minority carriers in the forward bias, explaining how electrons and holes recombine, leading to a recombination current. The instructor emphasizes the negligible generation-recombination processes in the depletion region for ideal diodes. The lecture progresses to the calculation of minority carrier density at the edges of the diffusion zones and the distribution of these carriers. The concept of quasi-Fermi levels is introduced, illustrating how they vary in forward and reverse bias conditions. The instructor also discusses the diffusion currents of minority carriers and the ideal current-voltage characteristics of the diode. Finally, the lecture addresses the diffusion capacitance associated with minority carrier storage in the diffusion zones, highlighting its significance in the diode's behavior during operation. Overall, the lecture provides a comprehensive understanding of the fundamental principles governing ideal p-n junction diodes.