Noise in the MOS Transistor at RF

In course

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Description

This lecture covers the impact of noise in MOS transistors at radio frequencies, focusing on channel noise, terminal noise currents, thermal noise models, velocity saturation effects, and noise parameters in RF transistors. It discusses the challenges of noise in low-power radio design and presents examples of thermal noise and gate resistance noise effects.

Instructor

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Official source

https://mediaspace.epfl.ch/media/0_zj9v6mr8

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Ontological neighbourhood

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