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Please note that this is not a complete list of this person’s publications. It includes only semantically relevant works. For a full list, please refer to Infoscience.
We present the first avalanche photodiode (APD) successfully fabricated in standard 65nm CMOS technology. The APD operates both in proportional and Geiger mode at -60C to +60C temperature range. The device comprises an octagonal n+p-well junction surrounde ...
2013
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Single-photon avalanche diodes (SPADs) are evaluated in two sub-100nm CMOS technologies. Several geometries are implemented, whereas premature edge breakdown (PEB) prevention is achieved with n-well rings. The octagonal SPADs are implemented in 90nm and 65 ...
2011
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We present a CMOS image sensor with deep-subwavelength, digital 1-T pixels designed for use in a digital film concept known as Gigavision (GV) camera. In GV, the levels of gray in the picture are derived from the concentration of activated pixels. Activate ...