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Conductive domain walls in ferroelectrics offer a promising concept of nanoelectronic circuits with 2D domain-wall channels playing roles of memristors or synoptic interconnections. However, domain wall conduction remains challenging to control and pA-range currents typically measured on individual walls are too low for single-channel devices. Charged domain walls show higher conductivity, but are generally unstable and difficult to create. Here, we show highly conductive and stable channels on ubiquitous 180 degrees domain walls in the archetypical ferroelectric, tetragonal Pb(Zr,Ti)O-3. These electrically erasable/rewritable channels show currents of tens of nanoamperes (200 to 400 nA/mu m) at voltages
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Dragan Damjanovic, Vasiliki Tileli, Reinis Ignatans