Concept

Row hammer

Summary
Row hammer (also written as rowhammer) is a security exploit that takes advantage of an unintended and undesirable side effect in dynamic random-access memory (DRAM) in which memory cells interact electrically between themselves by leaking their charges, possibly changing the contents of nearby memory rows that were not addressed in the original memory access. This circumvention of the isolation between DRAM memory cells results from the high cell density in modern DRAM, and can be triggered by specially crafted memory access patterns that rapidly activate the same memory rows numerous times. The row hammer effect has been used in some privilege escalation computer security exploits, and network-based attacks are also theoretically possible. Different hardware-based techniques exist to prevent the row hammer effect from occurring, including required support in some processors and types of DRAM memory modules. In dynamic RAM (DRAM), each bit of stored data occupies a separate memory cell that is electrically implemented with one capacitor and one transistor. The charge state of a capacitor (charged or discharged) is what determines whether a DRAM cell stores "1" or "0" as a binary value. Huge numbers of DRAM memory cells are packed into integrated circuits, together with some additional logic that organizes the cells for the purposes of reading, writing, and refreshing the data. Memory cells (blue squares in both illustrations) are further organized into matrices and addressed through rows and columns. A memory address applied to a matrix is broken into the row address and column address, which are processed by the row and column address decoders (in both illustrations, vertical and horizontal green rectangles, respectively). After a row address selects the row for a read operation (the selection is also known as row activation), bits from all cells in the row are transferred into the sense amplifiers that form the row buffer (red squares in both illustrations), from which the exact bit is selected using the column address.
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