Gaussian beamIn optics, a Gaussian beam is a beam of electromagnetic radiation with high monochromaticity whose amplitude envelope in the transverse plane is given by a Gaussian function; this also implies a Gaussian intensity (irradiance) profile. This fundamental (or TEM00) transverse Gaussian mode describes the intended output of most (but not all) lasers, as such a beam can be focused into the most concentrated spot. When such a beam is refocused by a lens, the transverse phase dependence is altered; this results in a different Gaussian beam.
Carrier generation and recombinationIn the solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices, such as photodiodes, light-emitting diodes and laser diodes. They are also critical to a full analysis of p-n junction devices such as bipolar junction transistors and p-n junction diodes.
Fiber-optic communicationFiber-optic communication is a method of transmitting information from one place to another by sending pulses of infrared or visible light through an optical fiber. The light is a form of carrier wave that is modulated to carry information. Fiber is preferred over electrical cabling when high bandwidth, long distance, or immunity to electromagnetic interference is required. This type of communication can transmit voice, video, and telemetry through local area networks or across long distances.
Molecular-beam epitaxyMolecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of nanotechnologies. MBE is used to fabricate diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such as CDs and DVDs). Original ideas of MBE process were first established by K.
Indium gallium arsenideIndium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics.
Helium–neon laserA helium–neon laser or He-Ne laser is a type of gas laser whose high energetic medium gain medium consists of a mixture of ratio(between 5:1 and 20:1) of helium and neon at a total pressure of about 1 torr inside of a small electrical discharge. The best-known and most widely used He-Ne laser operates at a wavelength of 632.8 nm, in the red part of the visible spectrum. The first He-Ne lasers emitted infrared at 1150 nm, and were the first gas lasers and the first lasers with continuous wave output.
Laser printingLaser printing is an electrostatic digital printing process. It produces high-quality text and graphics (and moderate-quality photographs) by repeatedly passing a laser beam back and forth over a negatively charged cylinder called a "drum" to define a differentially charged image. The drum then selectively collects electrically charged powdered ink (toner), and transfers the image to paper, which is then heated to permanently fuse the text, imagery, or both, to the paper.
Diffraction gratingIn optics, a diffraction grating is an optical grating with a periodic structure that diffracts light into several beams travelling in different directions (i.e., different diffraction angles). The emerging coloration is a form of structural coloration. The directions or diffraction angles of these beams depend on the wave (light) incident angle to the diffraction grating, the spacing or distance between adjacent diffracting elements (e.g., parallel slits for a transmission grating) on the grating, and the wavelength of the incident light.
Indium phosphideIndium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors. Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide at 400 °C., also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphine.
RedRed is the color at the long wavelength end of the visible spectrum of light, next to orange and opposite violet. It has a dominant wavelength of approximately 625–740 nanometres. It is a primary color in the RGB color model and a secondary color (made from magenta and yellow) in the CMYK color model, and is the complementary color of cyan. Reds range from the brilliant yellow-tinged scarlet and vermillion to bluish-red crimson, and vary in shade from the pale red pink to the dark red burgundy.
