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Water- and O-sensitive compds. (tBu3SiEX2)2, tBu3SiEX2.Do, and (tBu3Si)2EX (E = Al, Ga, In; X = (F), Cl, Br; Do = OR2, NR3) were synthesized by reaction of EX3 with tBu3SiNa in the absence or presence of donors. In addn., (tBu3Si)AlBr2, (tBu3Si)2InF, and t ...
Good quality ab initio calcns. (MP2) show that the water adducts of BX3 and CX3+ have totally different structures (X = F-I). While all H2O-BX3 complexes have classical Cs sym. structures with strong B-O bonds and addnl. H-bonding, the heavier CX3+ cations ...
The development of the interfacial bond strength as a function of bonding conditions has been investigated in two representative semicrystalline thermoplastics, isotactic polypropylene and polyamide 12. If one side of the interface is well above the meltin ...
The kinetics and mechanism of the title heterogeneous halogen exchange reactions of potential atmospheric importance have been studied under molecular flow conditions in a FEP Teflon-coated Knudsen flow reactor on HX (X = Cl, Br, I) - doped ice condensed f ...
Pure and K-doped vanadia/titania prepared by different methods have been studied in order to elucidate the role of vanadia species (monomeric, polymeric, bulk) in catalytic toluene partial oxidation. The ratio of different vanadia species was controlled by ...
Starting from six industrially available fluorinated pyridines, an expedient access to all three tetrafluoropyridines, all six trifluoropyridines, and the five non-com. difluoropyridines was developed. The methods employed for the selective removal of fluo ...
Indenyllithium reacts with dichlorobis(dimethylamino)diborane(4) with formation of bis(dimethylamino)bis(1-indenyl)-diborane(4) which rearranges on heating to the isomer bis(dimethylamino)bis(3-indenyl)diborane(4). The mixed isomer bis(dimethylamino)(1-ind ...
The first example of an oligothiophene-peptide conjugate, which was obtained by solid-phase acylation of a resin-bound silk-inspired oligopeptide sequence with a carboxylic acid functionalized regioregular tetra(3- hexylthiophene) derivative, is reported. ...
Prepn. of the title compd. (I) from starting materials CI4 and AgAl{OC(CF3)3}4 was performed with the complete exclusion of light and with carefully purified diiodine-free CI4, since CI4 decomps. within minutes in soln. in light with formation of I2 ...
A heat sink that is particularly suitable for semiconductor components is made from a diamond-containing composite material. In addition to a diamond fraction amounting to 40-90% by volume, the composite material also contains 7 to 59% by volume copper or ...
