Electron backscatter diffraction

Electron backscatter diffraction (EBSD) is a scanning electron microscopy (SEM) technique used to study the crystallographic structure of materials. EBSD is carried out in a scanning electron microscope equipped with an EBSD detector comprising at least a phosphorescent screen, a compact lens and a low-light camera. In this configuration, the SEM incident beam hits the tilted sample. As backscattered electrons leave the sample, they interact with the crystal's periodic atomic lattice planes and diffract according to Bragg's law at various scattering angles before reaching the phosphor screen forming Kikuchi patterns (EBSPs). EBSD spatial resolution depends on many factors, including the nature of the material under study and the sample preparation. Thus, EBSPs can be indexed to provide information about the material's grain structure, grain orientation, and phase at the micro-scale. EBSD is applied for impurities and defect studies, plastic deformation, and statistical analysis for average misorientation, grain size, and crystallographic texture. EBSD can also be combined with energy-dispersive X-ray spectroscopy (EDS), cathodoluminescence (CL), and wavelength-dispersive X-ray spectroscopy (WDS) for advanced phase identification and materials discovery. EBSD is a versatile and powerful technique that can provide valuable insights into the microstructure and properties of a wide range of materials. Hence, it is widely used in materials science and engineering, geology, and biological research. It is a key tool for developing new materials and understanding their behaviour under different conditions. The change and degradation in electron backscatter patterns (EBSPs) provide information about lattice distortion in the diffracting volume. Pattern degradation (i.e., diffuse quality) can be used to assess the level of plasticity. Changes in the EBSP zone axis position can be used to measure the residual stress and small lattice rotations. EBSD can also provide information about the density of geometrically necessary dislocations (GNDs).