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Capacitors in metal-insulator-metal structure have been fabricated with different bottom electrodes. It has been found that the observed losses are enormous at gigahertz frequencies unless due care is taken not only for the conductivity of the bottom elect ...
The effect of 1 MeV ion implantation on leakage conduction, dielectric and ferroelectric properties of the Pt/Pb(ZrxTi1-x)(2)O-3/Pt capacitors is studied for a wide range of implantation doses (10(10)-10(16) cm(-2)). It is shown that the implantation of Pt ...
In this communication we address two issues essential for low-voltage memory applications of ferroelectric thin films: the size effect on polarization switching, and polarization fatigue. According to the proposed concept, both of these phenomena are contr ...
