Concept

Epitaxial wafer

Summary
An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in photonics, microelectronics, spintronics, or photovoltaics. The epi layer may be the same material as the substrate, typically monocrystaline silicon, or it may be a silicon dioxide (SoI) or a more exotic material with specific desirable qualities. The purpose of epitaxy is to perfect the crystal structure over the bare substrate below and improve the wafer surface's electrical characteristics, making it suitable for highly complex microprocessors and memory devices. History Silicon epi wafers were first developed around 1966 and achieved commercial acceptance by the early 1980s. Methods for growing the epitaxial layer on monocrystalline silicon or other wafers include: various types of chemical vapor deposition (CVD) classified as Atmospheric pressure CVD (APCVD) or metal organic chemical vapor deposition (MOCVD), as well a
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