Concept

Extreme ultraviolet lithography

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This article investigates the device variability induced by the total ionizing dose (TID) effects in a commercial 16-nm bulk nFinFETs, using specially designed test structures and measurement procedures aimed at maximizing the matching between devices. DC ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Spontaneous formation of ordered micro-wrinkles on a thermosensitive resist

Jürgen Brugger, Giovanni Boero, Xia Liu, Ana Conde Rubio, Mohammadreza Rostami

Self-organizing patterns with micrometer-scale features are promising for applications in photonics and bioengineering. Their spontaneous formation reduces the number of required processing steps. Here, we report an approach to spontaneously form stochasti ...

2021

FABRICATION AND ANALYSIS OF THIN FILM LITHUM NIOBATE RESONATORS FOR 5GHz FREQUENCY AND LARGE k(t)(2) APPLICATIONS

Luis Guillermo Villanueva Torrijo, Seniz Esra Küçük, Soumya Yandrapalli, Victor Plessky

This work presents the fabrication and analysis of suspended thin film Lithium Niobate resonators. The yield of the new fabrication process presented below is >90% showing devices with high k(t)(2) of 28% resonators at 5GHz, making them suitable for high f ...

IEEE2021

Fabrication of plasmonic structures with well-controlled nanometric features: a comparison between lift-off and ion beam etching

Olivier Martin, Christian Santschi, Banafsheh Abasahl

After providing a detailed overview of nanofabrication techniques for plasmonics, we discuss in detail two different approaches for the fabrication of metallic nanostructures based on e-beam lithography. The first approach relies on a negative e-beam resis ...

IOP PUBLISHING LTD2021

Mesoscopic magnetic systems: From fundamental properties to devices

Dirk Grundler

Research into mesoscopic magnetic systems, which incorporate magnetic elements with dimensions ranging from a few nm up to a few 10s of micrometer, has been spurred on by the developments in their fabrication, characterisation, and control. Electron beam a ...

2021

Nanopillars Enabling III-V Integration on Si (100) and (111)

Lucas Güniat

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

EPFL2021

The most prevalent materials used in the field of plasmonics are Au and Ag. However, for the past few years, the plasmonic community has also been looking for alternative materials that have lower losses than Au and higher stability than Ag. This thesis is ...

EPFL2021

Cantilever beams are used as mass sensing device of chemical analyte by measuring the shift in frequency. However there resolution is linked to their size. As it become increasingly hard to produce smaller device an alternative is to use mode localisation ...

2021

Smooth GaN membranes by polarization-assisted electrochemical etching

Nicolas Grandjean, Jean-François Carlin, Joachim Armand Simonne Ciers

III-nitride membranes offer promising perspectives and improved device designs in photonics, electronics, and optomechanics. However, the removal of the growth substrate often leads to a rough membrane surface, which increases scattering losses in optical ...

AMER INST PHYSICS2021

The objective of this semester project is to investigate different fabrication processes and materials used for the fabrication of piezoelectric electrodes. More in detail, to investigate if the use of test wafers and high resistivity wafers play a role on ...

2021