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The effect of 1 MeV ion implantation on leakage conduction, dielectric and ferroelectric properties of the Pt/Pb(ZrxTi1-x)(2)O-3/Pt capacitors is studied for a wide range of implantation doses (10(10)-10(16) cm(-2)). It is shown that the implantation of Pt ...
It is shown that the effects of large de bias and ac driving fields on the dielectric permittivity of single crystals of PbMg1/3Nb2/3O3 (PMN) relaxer ferroelectric exhibit very different behavior, including anisotropy and sign of the effect, which is trace ...
We develop a fully vectorial formalism for the investigation of electromagnetic scattering in polarizable backgrounds, i.e., where the scatterers are not in vacuum but situated in a medium with a dielectric permittivity different from unity. Our approach i ...
The effective piezoelectric coefficient e(31) has been measured on sol-gel processed Pb(ZrxTi1-x)O-3 thin films with Zr concentrations ranging from 45 to 60%. The largest value was observed at 45% Zr, although dielectric constant and effective d(33) peak a ...
Through the use of relations analogous to that of the Rayleigh law, it is demonstrated that the ac electric field dependence of the permittivity of ferroelectric thin films can be described. It is further shown that both reversible and irreversible compone ...
Dielectric permittivity of PbMg1/3Nb2/3O3 (PMN) relaxor was investigated as a function of DC bias and AC driving field. In single crystals, DC and AC field effects exhibited very different behavior, including anisotropy and sign of the effect. It was shown ...
The evolution of switching polarization (P-r(s)) suppression, in Pb(Zr,Ti)O-3 films, induced by two different electric treatments is addressed in terms of the nonlinear dielectric response. The ac electric field dependence of dielectric permittivity was co ...
The non-linear dielectric properties of single crystals of PbMg1/3Nb2/3O3 relaxer ferroelectric were investigated experimentally by using measurements of the dielectric permittivity of this material as a function of the DC bias and the AC driving fields. T ...
The dependence of the permittivity, on uniaxial pressure of ceramics in the paraelectric, ferroelectric and relaxer phases has been investigated for BaTiO3, Pb(ZrTi)O-3 and Pb(Mg1/3Nb2/3)O-3. In the paraelectric ic phase, upon the application of stress, a ...
The effective piezoelectric coefficient e(31) has been measured on sol-gel processed Pb(ZrxTi1-x)O-3 thin films with Zr concentrations ranging from 45 to 60%. The largest value was observed at 45% Zr, although dielectric constant and effective d(33) peak a ...