Concept

Transistor radio

Related publications (35)

Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption

Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. W ...

EPFL2016

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Today circuit failures in Smart Power ICs due to substrate couplings are partially addressed during the circuit design phase. The state-of-the-art guidelines for the optimization of parasitic couplings provide mainly qualitative rules, which are difficult ...

Institute of Electrical and Electronics Engineers2016

Cmos image sensor

Assim Boukhayma, Arnaud Peizerat

A CMOS image sensor including a pixel including: a photodiode in series with a MOS transistor between a first reference potential and a sense node; a MOS transistor connecting the sense node to a second reference potential; and a third MOS transistor assem ...

2016

Practical Applications of Tunnel Field Effect Transistors

Traditional metal-oxide-semiconductor field effect transistor scaling has advanced successfully over 50 years providing significant increases in transistor count per chip and operating frequency, thus enabled the built of ever more performant and complex s ...

EPFL2015

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Nanosystems are large-scale integrated systems exploiting nanoelectronic devices. In this work, we consider double independent gate, vertically-stacked nanowire FETs with gate-all-around structures and typical diameter of 20-nm. These devices, which we hav ...

Royal Soc2014

Air-stable bottom-gate, top-contact n-channel organic transistors based on a naphthalene diimide exhibiting electron mobilities up to 0.8 cm(2)/Vs at low voltages were fabricated. Transistors with channel lengths of 1 mu m show a transconductance of 60 mS/ ...

Amer Inst Physics2013

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Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of information storage. MoS2 ...

Amer Chemical Soc2013

In this work, a sub sampling receiver front end at 2.4 GHz with high Q filtering to perform channel selection at RF is presented. A low power solution for channel selection directly at RF is proposed in this work using pseudo-self-biased inverter amplifier ...

2012

In view of the Large Hadrons Collider experiments upgrade, where the inner front-end electronics will require higher supply power, a new power distribution scheme has to be designed. This thesis presents a new and more efficient scheme based on step-down D ...

EPFL2012

Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid appro ...

EPFL2011

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