Atomic spies

Related publications (15)

About
Privacy
Disclaimer

Graph Chatbot

Efficient Logging in Non-Volatile Memory by Exploiting Coherency Protocols

Non-volatile memory (NVM) technologies such as PCM, ReRAM and STT-RAM allow processors to directly write values to persistent storage at speeds that are significantly faster than previous durable media such as hard drives or SSDs. Many applications of NVM ...

ACM2017

Atomic boxes: coordinated exception handling with transactional memory

Vincent Gramoli, Pascal Felber

In concurrent programs raising an exception in one thread does not prevent others from operating on an inconsistent shared state. Instead, exceptions should ideally be handled in coordination by all the threads that are affected by their cause. In this pap ...

2011

Stress-modulated composition in the vicinity of dislocations in nearly lattice matched AlxIn1-x N/GaN heterostructures: A possible explanation of defect insensitivity

Nicolas Grandjean, Jean-François Carlin, Marco Cantoni, Eric Feltin, Pierre Stadelmann, Anas Mouti, Jean-Luc Rouvière

Evidence of composition fluctuations around threading dislocations at scales ranging from atomic distances to tens of nanometers is provided by z-contrast imaging, strain measurement, and energy dispersive x-ray spectroscopy in AlxIn1-x N/GaN heterostructu ...

2011

Scanning Tunneling Microscopy and Luminescence of Individual Nanostructures

Theresa Lutz

A detailed investigation and characterization of the local properties of individual nanoscopic structures is of great importance for the understanding of novel physical phenomena at the nanoscale as well as for the assessment of their possible use in futur ...

EPFL2011

O-2 oxidation reaction at the Si(100)-SiO2 interface: A first-principles investigation

Alfredo Pasquarello, Angelo Bongiorno

We investigated the oxidation reaction of the O-2 molecule at the Si(100)-SiO2 interface by using a constrained ab initio molecular dynamics approach. To represent the Si(100)-SiO2 interface, we adopted several model interfaces whose structural properties ...

Kluwer Academic Publishers, Springer2005

Page 2 of 2

Stress-modulated composition in the vicinity of dislocations in nearly lattice matched AlxIn1-x N/GaN heterostructures: A possible explanation of defect insensitivity

Nicolas Grandjean, Jean-François Carlin, Marco Cantoni, Eric Feltin, Pierre Stadelmann, Anas Mouti, Jean-Luc Rouvière

2011