MEMS magnetic field sensor

A MEMS magnetic field sensor is a small-scale microelectromechanical systems (MEMS) device for detecting and measuring magnetic fields (Magnetometer). Many of these operate by detecting effects of the Lorentz force: a change in voltage or resonant frequency may be measured electronically, or a mechanical displacement may be measured optically. Compensation for temperature effects is necessary. Its use as a miniaturized compass may be one such simple example application. Magnetic field sensing Magnetometers can be categorized into four general types depending on the magnitude of the measured field. If the targeted B-field is larger than the earth magnetic field (maximum value around 60 μT), the sensor does not need to be very sensitive. To measure the earth field larger than the geomagnetic noise(around 0.1 nT), better sensors are required. For the application of magnetic anomaly detection, sensors at different locations have to be used to cancel the spatial-correlated noise

Silicon Oxide Walls

Hugo Calamandrei

Nowadays almost all the mobile networks use the 4G and will eventually soon use the 5G. To use this technology, devices need lots of band filters. This is why the Advanced NEMS laboratory of the EPFL is developing a new kind of MEMS resonant device at 5GHz called "Lithium niobate bulk acoustic resonator". The goal of this project is to compare several techniques to create thin walls by several deposition methods into silicon layer in order to allow chain production of those resonators.

2021

Integrated fluxgate compass for portable applications

Predrag Drljaca

Modern applications in industry, navigation and medicine demand small and sensitive magnetic field sensors. In this thesis we have developed a new planar micro fluxgate magnetometer. High resolution, low power consumption and orthogonal fields detection makes it suitable for portable compass applications. The developed sensor is a fully integrated device based on CMOS process that provides driving and readout electronics, plus the metallization layers for the excitation and pickup coils. A soft amorphous ferromagnetic material is bonded and structured, using an additional, postprocess implemented on a whole 6 inch wafer to form sensor core on the surface of the chip. The single core principle was selected with the intention to elongate the core, reduce the power consumption and increase sensitivity. We employed a new extraction method, based on the detection of mean value of the induced voltage peaks in the pickup coil, which carry the information on the external field. Several models and tools for the optimization of the core geometry, excitation, as well as pickup coils have been developed. For the first time, the effect of perming has been investigated. Perming is manifested as a change in sensor offset after the magnetic shock. A model was developed, which uses equivalent magnetic pole pieces to account for the contribution of the "frozen" domains not affected by the excitation. Model shows that the effect is predominantly dependent on the level of the core saturation. The electronics has been integrated in a conventional 1 µm CMOS process. Apart from the excitation, a single electronic circuit is used for both axes in order to decrease the power consumption, reduce the chip size, and obtain better matching. The signal extraction principle is accomplished using a box-car circuit. To reduce the influence of the 1/f noise of the amplifiers, we implemented a modulation technique, using an additional modulator. Modulated signal is amplified and finally demodulated using the correlated double sampling demodulator. We have implemented a new digital feedback, for the first time applied on the excitation coils. It consists of comparator, 8-bit U/D counter and current sources to create magnetic field for contra action. The output of the counter represents the digital information on the external field and is transmitted using I2C communication block integrated on chip. The fabricated sensor works from a single 2.5 V power supply and consumes 8.5 mW in open loop mode and 10 mW with a feedback. With the excitation at 350 kHz, the magnetometer exhibits the sensitivity of 2950 V/T and 8 kHz bandwidth. Equivalent noise spectral density at 1 Hz is equal to 12 nT/√Hz. When used as a compass, the sensor has the angular error of ± 1° without and ± 3° using feedback. Measured perming is equal to 1.4 µT, after the shock of 200 mT. Performance of the developed micro-fluxgate is better in terms of noise, angular error, perming, operational voltage, as well as power consumption, than any other fully integrated micro fluxgate presented up to date. In addition, the fabrication is based on the batch and low cost CMOS technology and compatible post-process so we can expect commercialisation in the near future.

EPFL2004

Integrated fluxgate compass for portable applications

Predrag Drljaca

EPFL2004

Silicon Oxide Walls

Integrated fluxgate compass for portable applications

2D material-based gas sensing device

Silicon Oxide Walls

Integrated fluxgate compass for portable applications

2D material-based gas sensing device