Concept

Barium titanate

Related publications (395)

Exchange anisotropy in the skyrmion host GaV4S8

Using ferromagnetic resonance spectroscopy at 34 GHz we explored the magnetic anisotropy of single-crystalline GaV4S8 in the field-polarized magnetic state. We describe the data in terms of an easy-axis type uniaxial anisotropy with an anisotropy constant ...

Institute of Physics2017

Symmetry breaking in hexagonal and cubic polymorphs of BaTiO3

Dragan Damjanovic, Alberto Biancoli

BaTiO3 appears in cubic and hexagonal variants, both of which are centrosymmetric. Samples of cubic BaTiO3 are known to exhibit breaking of the centric symmetry locally and globally. It has been proposed that the local symmetry breaking originates in polar ...

American Institute of Physics2016

Structure and pressure-induced ferroelectric phase transition in antiphase domain boundaries of strontium titanate from first principles

Nava Setter, Alexander Tagantsev, Alexander Kvasov

In this work, using zero kelvin ab initio calculations, we revisit the structure and ferroelectric phase transition in antiphase domain boundaries (APBs) in SrTiO3 (STO), which has been previously addressed in terms of a phenomenological approach. We confi ...

Amer Physical Soc2016

Short- and long-range polar order contributions to the Ferroelectric phase of Ca2+ doped SrTiO3

Alexander Tagantsev

Short- and long-range impurity-induced polar ordering in Sr1-xCaxTiO3 (x = 0.014) single crystals was investigated and discussed on the basis of light refraction, morphic birefringence and temperature-dependent dielectric hysteresis loop measurements. Anew ...

Iop Publishing Ltd2016

Experimental and first-principles study of point defects, domain walls, and point-defect/domain-wall interactions in ferroelectric oxides

Anand Chandrasekaran

Ferroelectric oxides, such as lead zirconate titanate, have proved invaluable due to their excellent dielectric and piezoelectric properties. These classes of materials possess a large electric polarization below the Curie temperature. Regions of the cryst ...

EPFL2016

Thin-film-specific elastic effects in ferroelectric domain structures

Konstantin Shapovalov

An essential feature of ferroelectric thin films is the presence in them of domain structures. In order to efficiently implement ferroelectric films into potential new ferroelectrics-based devices, it is of high interest to understand the behaviour of doma ...

EPFL2016

Velocity Control of 180 degrees Domain Walls in Ferroelectric Thin Films by Electrode Modification

Nava Setter, Alexander Tagantsev, Tomas Sluka, Petr Yudin, Ludwig Feigl

The velocity of individual 1800 domain walls in thin ferroelectric films of PbZr0.1Ti0.9O3 is strongly dependent on the thickness of the top Pt electrode made by electron-beam induced deposition (EBID). We show that when the thickness is varied in the rang ...

Amer Chemical Soc2016

Piezoelectric enhancement under negative pressure

Nava Setter, Alexander Tagantsev, Tomas Sluka, Alexander Kvasov, Silviu Cosmin Sandu, Jin Wang

Enhancement of ferroelectric properties, both spontaneous polarization and Curie temperature under negative pressure had been predicted in the past from first principles and recently confirmed experimentally. In contrast, piezoelectric properties are expec ...

Nature Publishing Group2016

Engineered a/c domain patterns in multilayer (110) epitaxial Pb(Zr,Ti)O-3 thin films: Impact on domain compliance and piezoelectric properties

Nava Setter, Silviu Cosmin Sandu, Andrea Mazzalai, Mahamudu Mtebwa, Arnaud Robert André Crassous

While there is extensive literature on the influence of both compressive and tensile strain on the domain patterns of (001) tetragonal ferroelectric thin films, little is known regarding domain engineering in (110) films. The primary reason is the absence ...

Amer Inst Physics2016

Strain Engineering of Electrical Conductivity in Epitaxial Thin Ba0.7Sr0.3TiO3 Film Heterostructures

Nava Setter, Sarunas Bagdzevicius, Barbara Maraston Fraygola

Thin epitaxial films have a great potential to be used in real life applications, such as oxide-on-silicon. However, they often contain a large amount of defects, leading to an enhanced electrical conductivity. This could be desirable in some applications ...

Lithuanian Physical Soc2016

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