Superconducting nanowire single-photon detector

The superconducting nanowire single-photon detector (SNSPD or SSPD) is a type of optical and near-infrared single-photon detector based on a current-biased superconducting nanowire. It was first developed by scientists at Moscow State Pedagogical University and at the University of Rochester in 2001. The first fully operational prototype was demonstrated in 2005 by the National Institute of Standards and Technology (Boulder), and BBN Technologies as part of the DARPA Quantum Network. As of 2023, a superconducting nanowire single-photon detector is the fastest single-photon detector (SPD) for photon counting. It is a key enabling technology for quantum optics and optical quantum technologies. SNSPDs are available with very high detection efficiency, very low dark count rate and very low timing jitter, compared to other types of single-photon detectors. SNSPDs are covered by International Electrotechnical Commission (IEC) international standards. As of 2023, commercial SNSPD devices are available in multichannel systems in a price range of 100,000 euros. The SNSPD consists of a thin (≈ 5 nm) and narrow (≈ 100 nm) superconducting nanowire. The length is typically hundreds of micrometers, and the nanowire is patterned in a compact meander geometry to create a square or circular pixel with high detection efficiency. The nanowire is cooled well below its superconducting critical temperature and biased with a DC current that is close to but less than the superconducting critical current of the nanowire. A photon incident on the nanowire breaks Cooper pairs and reduces the local critical current below that of the bias current. This results in the formation of a localized non-superconducting region, or hotspot, with finite electrical resistance. This resistance is typically larger than the 50 Ohm input impedance of the readout amplifier, and hence most of the bias current is shunted to the amplifier. This produces a measurable voltage pulse that is approximately equal to the bias current multiplied by 50 Ohms.