Concept

Content-addressable memory

Related publications (73)

Improved Screening Ability of Ferroelectric-Semiconductor Interface

Nava Setter, Alexander Tagantsev, Maxim Gureev

Recent progress in integrating ferroelectrics directly on silicon opens the exciting possibility of implementing ferroelectric-semiconductor devices. One of the major problems for such integration is the instability of the ferroelectric state in very thin ...

2011

Ferroelectric Field Effect Transistor for Memory and Switch Applications

Giovanni Antonio Salvatore

Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid appro ...

EPFL2011

Benchmarking of standard-cell based memories in the sub-VT domain in 65-nm CMOS technology

Andreas Peter Burg, Pascal Andreas Meinerzhagen

In this paper, standard-cell based memories (SCMs) are proposed as an alternative to full-custom sub-VT SRAM macros for ultra-low-power systems requiring small memory blocks. The energy per memory access as well as the maximum achievable throughput in the ...

2011

System of nano-silver inkjet printed memory cards and PC card reader and programmer

Alexandru Rusu, Suat Ayoz

This work describes the development of inkjet printed, low-cost memory cards, and complementary pair of memory card reader and card reader/programmer for PCs. This constitutes a complete system that can be used for various applications. The memory cards ar ...

Elsevier2011

Towards generic low-power area-efficient standard cell based memory architectures

Andreas Peter Burg, Pascal Andreas Meinerzhagen

Digital IC designers often use SRAM macrocells to implement on-chip memory functionality. In this paper we argue that in several situations, standard cell based memories (SCMs) can have advantages over SRAM macrocells. Various ways to implement SCMs are pr ...

IEEE2010

The Hysteretic Ferroelectric Tunnel FET

Mihai Adrian Ionescu, Didier Bouvet, Luca De Michielis, Livio Lattanzio, Giovanni Antonio Salvatore, Katherine Boucart

We present the fabrication and the electrical characterization of ferroelectric tunnel FETs (Fe-TFETs). This novel family of hysteretic switches combines the low subthreshold power of band-to-band tunneling devices with the retention characteristics of Fe ...

2010

Memristive Devices Fabricated with Silicon Nanowire Schottky Barrier Transistors

Giovanni De Micheli, Sandro Carrara, Davide Sacchetto, Yusuf Leblebici, Mohamed Haykel Ben Jamaa

This paper reports on the memory and memristive effects of Schottky barrier field effect transistors (SBFET) with gate-all-around (GAA) configuration and Si nanowire (SiNW) channel. Similar behavior has also been investigated for SBFETs with poly-Si nanowi ...

IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2010

Active pixel sensor array for high spatio-temporal resolution electrophysiological recordings from single cell to large scale neuronal networks

Kilian Imfeld, Luca Berdondini

This paper presents a chip-based electrophysiological platform enabling the study of micro- and macro-circuitry in in-vitro neuronal preparations. The approach is based on a 64 x 64 microelectrode array device providing extracellular electrophysiological a ...

Royal Society of Chemistry2009

Reputation system for User Generated wireless podcasting

Jean-Yves Le Boudec

The user-generated podcasting service over mobile opportunistic networks can facilitate the user generated content dissemination while humans are on the move. However, in such a distributed and dynamic network environment, the design of efficient content f ...

2008

Can Software Routers Scale?

Software routers can lead us from a network of special-purpose hardware routers to one of general-purpose extensible infrastructure--if, that is, they can scale to high speeds. We identify the challenges in achieving this scalability and propose a solution ...

ACM2008

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