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With transistors set to reach their smallest possible size in the next decade, the silicon chip is likely to change dramatically, or be replaced entirely. The transistor industry's path which has been largely shaped by Gordon Moore's famous prediction that ...
Embedded memories consume an increasingly dominant part of the overall area and power of a large variety of systems-on-chip [ITRS’09]: 1) biomedical implants and wireless sensor networks require robust memories operating in the sub-VT domain; 2) many handh ...
This paper explores the potential of VeFETs for mixed-signal circuits. A new physics-based compact DC model of the VeSFET operated in subthreshold region is presented and used to derive 1st-order sensitivities of the device threshold voltage to process var ...
We present a new electronic device – the single-electron bipolar avalanche transistor (SEBAT) – which allows for the detection of single charges with a bandwidth typically above 1 GHz, exceeding by far the bandwidth of other room-temperature single-electro ...
An efficient transistor level implementation of a flexible, programmable Triangular Function (TF) that can be used as a Triangular Neighborhood Function (TNF) in ultra-low power, self-organizing maps (SOMs) realized as Application-Specific Integrated Circu ...
In the 60's, control, signals and systems had a common linear algebraic background and, according to their evolution, their respective backgrounds have now dramatically differed. Recovering such a common background, especially in the nonlinear context, is ...
Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...
This paper presents a complementary metal–oxide– semiconductor (CMOS) implementation of a conscience mechanism used to improve the effectiveness of learning in the winnertakes- all (WTA) artificial neural networks (ANNs) realized at the transistor level. T ...
Institute of Electrical and Electronics Engineers2010
This paper reports a simulation based study of the non-local tunneling model using a commercially available technology computer-aided design (TCAD) device simulator. Single gate Tunnel FET devices with 400nm gate length based on SOI technology are measured ...
The increase of components density in advanced microelectronics is practically dictated by the device size and the achievable pitch between the devices. Scaling down dimensions of devices and progress in the circuit design allowed following Moore's law dur ...