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Predicting microstructure evolution of metals under irradiation requires an in depth understanding of the production and properties of point defects and their clusters. Although, analytical descriptions based on the production bias model have recently been ...
A high density of small defect clusters, similar to those observed in irradiated or quenched metals. has been observed in the deformed f.c.c. metals Cu, Au and Ni. The preliminary results show that the defect clusters are predominantly stacking fault tetra ...
Identical GaAs/Al0.2Ga0.8As multiple-quantum-well (MQW) structures uniformly doped with Si at various concentrations ranging from 1x10(17) to 1X10(19) cm(-3) are grown by molecular-beam epitaxy to study the effects of the background Si-doping level on the ...
The interaction of vacancy loops (VLs) and stacking-fault tetrahedra (SFTs) with point defects and the processes of growth and shrinkage of VLs and SFTs have been studied using computer simulation and a long-range pair potential for copper. It was found th ...
The effects of background n- and p-type doping on Zn diffusion in GaAs/AlGaAs multilayered structures are investigated by secondary-ion-mass spectrometry and photoluminescence measurements. Zn diffusions are performed at 575 degrees C into Si-doped, Be-dop ...
Superconductivity in high-Tc cuprates is particularly sensitive to disorder due to the unconventional d-wave pairing symmetry. We investigated effects of disorder on the spectral properties of Bi2Sr2CaCu2O8+ ...
Microcrystalline silicon (μc-Si:H) of truly intrinsic character can be deposited by plasma-enhanced chemical vapor deposition (PECVD) when dichlorosilane (SiH2Cl2) is added. A dark conductivity of 1.6×10-8 S/cm and an activation energy of 0.62 eV are obtai ...
a-Si:H i-layers were deposited at different substrate temperatures and plasma excitation frequencies, while the other deposition parameters were kept constant. These layers were characterised by measuring the intrinsic mechanical stress and the defect dens ...
We have grown high-electron mobility transistor structures in the Al0.3Ga0.7As/In0.25Ga0.75As/GaAs material system with In0.25Ga0.75As channel thicknesses in the range 40-200 Angstrom. We have monitored the onset of channel relaxation using Hall mobility m ...
We explore the defect distribution and the degradation in electron beam pumped Zn1-xCdxSe/ZnSe laser structures by combining cathodoluminescence measurements in a scanning electron microscope with transmission electron microscopy. We found that degradation ...
